Design of Mid-Infrared Ge1-x Snx Homojunction p-i-n Photodiodes on Si Substrate

This work reports an optimal design and modeling of a high-performance normal-incidence GeSn homojunction p-i-n PDs on p-doped silicon (Si) substrate via Intrinsic-Si buffer. Specifically, we optimize the Sn concentration and the absorption layer thickness to simultaneously achieve high-speed, respo...

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Veröffentlicht in:	IEEE sensors journal 2022-04, Vol.22 (8), p.7743-7751
Hauptverfasser:	Kumar, Harshvardhan, Basu, Rikmantra
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p-i-n photodetector Germanium GeSn alloy homojunction Homojunctions Metals mid-infrared detector Optical buffering P-i-n photodiodes Photonic band gap PIN photodiodes Si photonics Silicon Silicon substrates Substrates
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