Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

For the first time, we propose a stackable vertical channel-all-around (CAA) In-Ga-Zn-O field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic random access memory (DRAM) application. The device is fabricated in a back-end-of-line (BEOL) compatible process flow wher...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-04, Vol.69 (4), p.2196-2202
Hauptverfasser:	Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	4F² bit cell Atomic layer epitaxy Cycle ratio Density Dynamic random access memory dynamic random access memory (DRAM) Electrodes Field effect transistors Indium gallium zinc oxide In–Ga–Zn-O (IGZO) Logic gates Memory management plasma-enhanced atomic layer deposition (PEALD) Plasmas Power management Random access memory Semiconductor devices Stacking Zinc oxide
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