Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic

This paper presents a series of multi-stage hybrid memristor-CMOS ternary combinational logic stages that are optimized for reducing silicon area occupation. Prior demonstrations of memristive logic are typically constrained to single-stage logic due to the variety of challenges that affect device p...

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Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2022-06, Vol.69 (6), p.2423-2434
Hauptverfasser: Wang, Xiao-Yuan, Dong, Chuan-Tao, Zhou, Peng-Fei, Nandi, Sanjoy Kumar, Nath, Shimul Kanti, Elliman, Robert G., Iu, Herbert Ho-Ching, Kang, Sung-Mo, Eshraghian, Jason K.
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Sprache:eng
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