Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition
Junction-to-case thermal resistance R thjc measurement under a double-side cooling condition of press-pack IGBTs (PP IGBTs) is a great challenge since the heat flow through the two heat paths is hard to be accurately extracted. In this article, an indirect method determining the proportion of heat d...
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Veröffentlicht in: | IEEE transactions on power electronics 2022-07, Vol.37 (7), p.8543-8553 |
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description | Junction-to-case thermal resistance R thjc measurement under a double-side cooling condition of press-pack IGBTs (PP IGBTs) is a great challenge since the heat flow through the two heat paths is hard to be accurately extracted. In this article, an indirect method determining the proportion of heat dissipation on both sides only by temperature measurement is proposed to simultaneously measure two single-sided R thjc of PP IGBTs under the double-side cooling condition, and it is performed with 4500 V/3000 A PP IGBTs. The test results show that the measured R thjc is not a fixed value but is related to the load current used in the test, it increases as the load current increases, which is different from the traditional wire-bonded IGBT module. A thermomechanical bidirectional coupling finite element model is built to explain the impact mechanism that the deformation of the device causes the change of internal heat flow distribution since the components will be properly separated. In addition, a simpler double-sided R thjc definition method that directly takes the average value of the case temperature on both sides as the case temperature to calculate the thermal resistance is developed, and the equivalence of the two methods are discussed based on the theoretical analysis and experiment. |
doi_str_mv | 10.1109/TPEL.2022.3151411 |
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In this article, an indirect method determining the proportion of heat dissipation on both sides only by temperature measurement is proposed to simultaneously measure two single-sided R thjc of PP IGBTs under the double-side cooling condition, and it is performed with 4500 V/3000 A PP IGBTs. The test results show that the measured R thjc is not a fixed value but is related to the load current used in the test, it increases as the load current increases, which is different from the traditional wire-bonded IGBT module. A thermomechanical bidirectional coupling finite element model is built to explain the impact mechanism that the deformation of the device causes the change of internal heat flow distribution since the components will be properly separated. In addition, a simpler double-sided R thjc definition method that directly takes the average value of the case temperature on both sides as the case temperature to calculate the thermal resistance is developed, and the equivalence of the two methods are discussed based on the theoretical analysis and experiment.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2022.3151411</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cooling ; Double-side cooling ; Electrical resistance measurement ; Finite element method ; Flow distribution ; Heat ; Heat transfer ; Heat transmission ; Insulated gate bipolar transistors ; junction-to-case thermal resistance ; Power measurement ; press-pack (PP) insulated gate bipolar transistors (IGBTs) ; Resistance heating ; Side cooling ; Temperature measurement ; Thermal resistance ; thermomechanical coupling ; Water heating</subject><ispartof>IEEE transactions on power electronics, 2022-07, Vol.37 (7), p.8543-8553</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-d9e21b732d1515a37ddc864459f9b09740b088a340add79a7dcd83660eba43463</citedby><cites>FETCH-LOGICAL-c293t-d9e21b732d1515a37ddc864459f9b09740b088a340add79a7dcd83660eba43463</cites><orcidid>0000-0001-5047-0834 ; 0000-0002-2568-2162</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9714010$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9714010$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Jie</creatorcontrib><creatorcontrib>Deng, Erping</creatorcontrib><creatorcontrib>Zhang, Yiming</creatorcontrib><creatorcontrib>Huang, Yongzhang</creatorcontrib><title>Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Junction-to-case thermal resistance R thjc measurement under a double-side cooling condition of press-pack IGBTs (PP IGBTs) is a great challenge since the heat flow through the two heat paths is hard to be accurately extracted. In this article, an indirect method determining the proportion of heat dissipation on both sides only by temperature measurement is proposed to simultaneously measure two single-sided R thjc of PP IGBTs under the double-side cooling condition, and it is performed with 4500 V/3000 A PP IGBTs. The test results show that the measured R thjc is not a fixed value but is related to the load current used in the test, it increases as the load current increases, which is different from the traditional wire-bonded IGBT module. A thermomechanical bidirectional coupling finite element model is built to explain the impact mechanism that the deformation of the device causes the change of internal heat flow distribution since the components will be properly separated. In addition, a simpler double-sided R thjc definition method that directly takes the average value of the case temperature on both sides as the case temperature to calculate the thermal resistance is developed, and the equivalence of the two methods are discussed based on the theoretical analysis and experiment.</description><subject>Cooling</subject><subject>Double-side cooling</subject><subject>Electrical resistance measurement</subject><subject>Finite element method</subject><subject>Flow distribution</subject><subject>Heat</subject><subject>Heat transfer</subject><subject>Heat transmission</subject><subject>Insulated gate bipolar transistors</subject><subject>junction-to-case thermal resistance</subject><subject>Power measurement</subject><subject>press-pack (PP) insulated gate bipolar transistors (IGBTs)</subject><subject>Resistance heating</subject><subject>Side cooling</subject><subject>Temperature measurement</subject><subject>Thermal resistance</subject><subject>thermomechanical coupling</subject><subject>Water heating</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtPwzAQhC0EEqXwAxAXS5xd_MrDx1JKKSqigvQcOfEGUlK72Mmh_55ErTjNYWd2dz6EbhmdMEbVQ7aeryaccj4RLGKSsTM0YkoyQhlNztGIpmlEUqXEJboKYUspkxFlI9S-drZsa2dJ68hMB8DZN_idbvAHhDq02paA30CHzsMObIu1NXhqdXPop9hVeO0hBLLW5Q9eLh6zgDfWgMdPrisaIJ-1ATxzrqntV6_W1MOta3RR6SbAzUnHaPM8z2YvZPW-WM6mK1JyJVpiFHBWJIKbvlKkRWJMmcZSRqpSBVWJpEVfSwtJtTGJ0okpTSrimEKhpZCxGKP74969d78dhDbfus73z4ecx1JQHsdqcLGjq_QuBA9Vvvf1TvtDzmg-wM0HuPkANz_B7TN3x0wNAP9-lTDZ8xZ_U411Ow</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Chen, Jie</creator><creator>Deng, Erping</creator><creator>Zhang, Yiming</creator><creator>Huang, Yongzhang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5047-0834</orcidid><orcidid>https://orcid.org/0000-0002-2568-2162</orcidid></search><sort><creationdate>20220701</creationdate><title>Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition</title><author>Chen, Jie ; Deng, Erping ; Zhang, Yiming ; Huang, Yongzhang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-d9e21b732d1515a37ddc864459f9b09740b088a340add79a7dcd83660eba43463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Cooling</topic><topic>Double-side cooling</topic><topic>Electrical resistance measurement</topic><topic>Finite element method</topic><topic>Flow distribution</topic><topic>Heat</topic><topic>Heat transfer</topic><topic>Heat transmission</topic><topic>Insulated gate bipolar transistors</topic><topic>junction-to-case thermal resistance</topic><topic>Power measurement</topic><topic>press-pack (PP) insulated gate bipolar transistors (IGBTs)</topic><topic>Resistance heating</topic><topic>Side cooling</topic><topic>Temperature measurement</topic><topic>Thermal resistance</topic><topic>thermomechanical coupling</topic><topic>Water heating</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Jie</creatorcontrib><creatorcontrib>Deng, Erping</creatorcontrib><creatorcontrib>Zhang, Yiming</creatorcontrib><creatorcontrib>Huang, Yongzhang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Jie</au><au>Deng, Erping</au><au>Zhang, Yiming</au><au>Huang, Yongzhang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2022-07-01</date><risdate>2022</risdate><volume>37</volume><issue>7</issue><spage>8543</spage><epage>8553</epage><pages>8543-8553</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>Junction-to-case thermal resistance R thjc measurement under a double-side cooling condition of press-pack IGBTs (PP IGBTs) is a great challenge since the heat flow through the two heat paths is hard to be accurately extracted. In this article, an indirect method determining the proportion of heat dissipation on both sides only by temperature measurement is proposed to simultaneously measure two single-sided R thjc of PP IGBTs under the double-side cooling condition, and it is performed with 4500 V/3000 A PP IGBTs. The test results show that the measured R thjc is not a fixed value but is related to the load current used in the test, it increases as the load current increases, which is different from the traditional wire-bonded IGBT module. A thermomechanical bidirectional coupling finite element model is built to explain the impact mechanism that the deformation of the device causes the change of internal heat flow distribution since the components will be properly separated. In addition, a simpler double-sided R thjc definition method that directly takes the average value of the case temperature on both sides as the case temperature to calculate the thermal resistance is developed, and the equivalence of the two methods are discussed based on the theoretical analysis and experiment.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2022.3151411</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-5047-0834</orcidid><orcidid>https://orcid.org/0000-0002-2568-2162</orcidid></addata></record> |
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subjects | Cooling Double-side cooling Electrical resistance measurement Finite element method Flow distribution Heat Heat transfer Heat transmission Insulated gate bipolar transistors junction-to-case thermal resistance Power measurement press-pack (PP) insulated gate bipolar transistors (IGBTs) Resistance heating Side cooling Temperature measurement Thermal resistance thermomechanical coupling Water heating |
title | Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition |
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