Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

An Extended Superjunction (SJ) Gate (ESG) Lateral Double-diffused Metal-Oxide Semiconductor (LDMOS) with full bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated by the SENTAURUS. It features a Fin Gate including Planar Gate (PG) and ESG: the ESG is formed...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-04, Vol.69 (4), p.1900-1905
Hauptverfasser:	Chen, Weizhong, Qin, Haifeng, Zhang, Hongsheng, Han, Zhengsheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulation Accumulation mode triple gate (ATG) Current density Doping Electric potential electron accumulation effect Electrons extended superjunction gate (ESG) FinFETs Leakage currents Logic gates R ON sp Telecommunications
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