Vertical and lateral heterogeneous integration

The wafer-scale integration of advanced optical, electrical, and micromechanical semiconductor devices on a single chip requires techniques for combining differing semiconductor structures in the plane of the wafer. We have developed a technique for achieving large-scale monolithic integration of la...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Geske, J., Jayaraman, V., Okuno, Y.L., Bowers, J.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Epitaxial layers Etching Gallium arsenide Indium gallium arsenide Indium phosphide Optical films Quantum well devices Substrates Vertical cavity surface emitting lasers Wafer bonding
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