DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

A Ka -band low-noise amplifier for low-consumption robust receivers is presented in this letter. The monolithic microwave integrated circuit (MMIC) is designed on a 100 nm GaN-on-Si technology provided by OMMIC foundry and decibel gain, average noise figure (NF) of 1.5 dB, with input-output return l...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2022-06, Vol.32 (6), p.555-558
Hauptverfasser:	Pace, L., Longhi, P. E., Ciccognani, W., Colangeli, S., Vitulli, F., Deborgies, F., Limiti, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Ka -band Amplifiers Circuit design Decibels Gain Gallium nitride Integrated circuits low-noise amplifier MMIC (circuits) Noise levels Noise measurement Performance evaluation Power consumption Radio frequency Robustness satellite applications Stress Survivability Transmission line measurements
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