InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz

We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record {f}_{\mathrm {MAX}} =1.2 THz, a simultaneous {f}_{\mathrm {T}} =475 GHz, and BV_{\mathrm {CEO}} =5.4 V. The resulting BV_{\mathrm {CEO}}\,\times \,{f}_{\mathrm {MAX}} =6.48 THz-V...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-04, Vol.69 (4), p.2122-2129
Hauptverfasser:	Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.
Format:	Artikel
Sprache:	eng
Schlagworte:	DH-HEMTs Double heterojunction bipolar transistors (DHBTs) Electrodes Etching GaAsSb III-V semiconductor materials Indium phosphide InP maximum oscillation frequency Metals Oscillators terahertz (THz)
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