Bias circuits for GaAs HBT power amplifiers

This paper discusses the effects of process and temperature variations on the performance of GaAs HBT power amplifier bias circuits. A novel feedback bias circuit, which overcomes these problems, is presented. The measured variation from 54 to 60 mA in the bias current, over the temperature range of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jarvinen, E., Kalajo, S., Matilainen, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation Current measurement Feedback circuits Gain control Gallium arsenide Heterojunction bipolar transistors Power amplifiers Resistors Temperature distribution Voltage
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