High isolation V-band SPDT switch MMIC for high power use [HEMTs application]

This paper presents design and performance of a V-band SPDT switch MMIC for high power use. The switch design utilizes distributed 5-shunt diodes. The developed SPDT switch shows an isolation of greater than 32 dB and an insertion loss of less than 1.8 dB in a broadband frequency range from 50 GHz t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shimura, T., Mimino, Y., Nakamura, K., Aoki, Y., Kuroda, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Circuits Communication switching Frequency HEMTs Insertion loss Millimeter wave technology MMICs Schottky diodes Switches
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!