High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

This work reports recent progress in the sub-6 GHz power performance of GaN-based HEMTs grown on high resistivity silicon substrates with passivation implanted termination (PIT) process. Thanks to the mitigated electric field crowding at the gate edge and the suppressed negative fixed charge-induced...

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Veröffentlicht in:	IEEE electron device letters 2022-02, Vol.43 (2), p.188-191
Hauptverfasser:	Lu, Hao, Hou, Bin, Yang, Ling, Zhang, Meng, Deng, Longge, Wu, Mei, Si, Zeyan, Huang, Sen, Ma, Xiaohua, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Continuous radiation Current carriers Depletion Electric fields Electric potential Fluorine Gallium nitrides GaN-on-silicon gate edge termination HEMTs High electron mobility transistors high electron mobility transistors (HEMTs) large-signal Leakage current Logic gates MODFETs passivation Passivity power-added-efficiency (PAE) Semiconductor devices Silicon substrates Stress Voltage Wide band gap semiconductors
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