Compound semiconductor physical device simulation for technology development at Motorola
There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle t...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 165 |
|---|---|
| container_issue | |
| container_start_page | 163 |
| container_title | |
| container_volume | |
| creator | Hartin, O.L. Ray, M. Li, P. Johnson, K. |
| description | There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented. |
| doi_str_mv | 10.1109/GAAS.2001.964369 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_964369</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>964369</ieee_id><sourcerecordid>964369</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-cdb52fb9a56ce9b02291b06ec149a341006795e4622d635487d200087e86c2d43</originalsourceid><addsrcrecordid>eNotUEtLxDAYDD7A3dW7eMofaP3yaNIcy6KrsOJBBW9Lmnx1I21TNl2h_97KehqGecAMIbcMcsbA3G-q6i3nACw3SgplzsiCC22yQonynCxBlyCUmskFWTBQMtNaF1dkmdI3AAjDywX5XMduiMfe04RdcLH3RzfGAx32UwrOttTjT3BIU-iOrR1D7GkzyyO6fR_b-DX9GbCNQ4f9SO1IX-Icj629JpeNbRPe_OOKfDw-vK-fsu3r5nldbbPAQI6Z83XBm9rYQjk0NXBuWA0KHZPGCskAlDYFSsW5V6KQpfbzYig1lspxL8WK3J16AyLuhkPo7GHanQ4RvzxSU6w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Compound semiconductor physical device simulation for technology development at Motorola</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hartin, O.L. ; Ray, M. ; Li, P. ; Johnson, K.</creator><creatorcontrib>Hartin, O.L. ; Ray, M. ; Li, P. ; Johnson, K.</creatorcontrib><description>There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.</description><identifier>ISSN: 1064-7775</identifier><identifier>ISBN: 0780366638</identifier><identifier>ISBN: 9780780366633</identifier><identifier>EISSN: 2379-5638</identifier><identifier>DOI: 10.1109/GAAS.2001.964369</identifier><language>eng</language><publisher>IEEE</publisher><subject>Calibration ; Costs ; III-V semiconductor materials ; Optimization methods ; Performance analysis ; PHEMTs ; Radio frequency ; RF signals ; Signal analysis ; Switches</subject><ispartof>GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191), 2001, p.163-165</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/964369$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,4052,4053,27932,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/964369$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hartin, O.L.</creatorcontrib><creatorcontrib>Ray, M.</creatorcontrib><creatorcontrib>Li, P.</creatorcontrib><creatorcontrib>Johnson, K.</creatorcontrib><title>Compound semiconductor physical device simulation for technology development at Motorola</title><title>GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)</title><addtitle>GAAS</addtitle><description>There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.</description><subject>Calibration</subject><subject>Costs</subject><subject>III-V semiconductor materials</subject><subject>Optimization methods</subject><subject>Performance analysis</subject><subject>PHEMTs</subject><subject>Radio frequency</subject><subject>RF signals</subject><subject>Signal analysis</subject><subject>Switches</subject><issn>1064-7775</issn><issn>2379-5638</issn><isbn>0780366638</isbn><isbn>9780780366633</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUEtLxDAYDD7A3dW7eMofaP3yaNIcy6KrsOJBBW9Lmnx1I21TNl2h_97KehqGecAMIbcMcsbA3G-q6i3nACw3SgplzsiCC22yQonynCxBlyCUmskFWTBQMtNaF1dkmdI3AAjDywX5XMduiMfe04RdcLH3RzfGAx32UwrOttTjT3BIU-iOrR1D7GkzyyO6fR_b-DX9GbCNQ4f9SO1IX-Icj629JpeNbRPe_OOKfDw-vK-fsu3r5nldbbPAQI6Z83XBm9rYQjk0NXBuWA0KHZPGCskAlDYFSsW5V6KQpfbzYig1lspxL8WK3J16AyLuhkPo7GHanQ4RvzxSU6w</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Hartin, O.L.</creator><creator>Ray, M.</creator><creator>Li, P.</creator><creator>Johnson, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>Compound semiconductor physical device simulation for technology development at Motorola</title><author>Hartin, O.L. ; Ray, M. ; Li, P. ; Johnson, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-cdb52fb9a56ce9b02291b06ec149a341006795e4622d635487d200087e86c2d43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Calibration</topic><topic>Costs</topic><topic>III-V semiconductor materials</topic><topic>Optimization methods</topic><topic>Performance analysis</topic><topic>PHEMTs</topic><topic>Radio frequency</topic><topic>RF signals</topic><topic>Signal analysis</topic><topic>Switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Hartin, O.L.</creatorcontrib><creatorcontrib>Ray, M.</creatorcontrib><creatorcontrib>Li, P.</creatorcontrib><creatorcontrib>Johnson, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hartin, O.L.</au><au>Ray, M.</au><au>Li, P.</au><au>Johnson, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Compound semiconductor physical device simulation for technology development at Motorola</atitle><btitle>GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)</btitle><stitle>GAAS</stitle><date>2001</date><risdate>2001</risdate><spage>163</spage><epage>165</epage><pages>163-165</pages><issn>1064-7775</issn><eissn>2379-5638</eissn><isbn>0780366638</isbn><isbn>9780780366633</isbn><abstract>There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.</abstract><pub>IEEE</pub><doi>10.1109/GAAS.2001.964369</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1064-7775 |
| ispartof | GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191), 2001, p.163-165 |
| issn | 1064-7775 2379-5638 |
| language | eng |
| recordid | cdi_ieee_primary_964369 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Calibration Costs III-V semiconductor materials Optimization methods Performance analysis PHEMTs Radio frequency RF signals Signal analysis Switches |
| title | Compound semiconductor physical device simulation for technology development at Motorola |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T13%3A10%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Compound%20semiconductor%20physical%20device%20simulation%20for%20technology%20development%20at%20Motorola&rft.btitle=GaAs%20IC%20Symposium.%20IEEE%20Gallium%20Arsenide%20Integrated%20Circuit%20Symposium.%2023rd%20Annual%20Technical%20Digest%202001%20(Cat.%20No.01CH37191)&rft.au=Hartin,%20O.L.&rft.date=2001&rft.spage=163&rft.epage=165&rft.pages=163-165&rft.issn=1064-7775&rft.eissn=2379-5638&rft.isbn=0780366638&rft.isbn_list=9780780366633&rft_id=info:doi/10.1109/GAAS.2001.964369&rft_dat=%3Cieee_6IE%3E964369%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=964369&rfr_iscdi=true |