Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film
In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2001-11, Vol.14 (4), p.365-371 |
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| creator | Pan, Tung Ming Lei, Tan Fu Ko, Fu Hsiang Chao, Tien Sheng Chiu, Tzu Huan Lee, Ying Hao Lu, Chih Peng |
| description | In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors. |
| doi_str_mv | 10.1109/66.964323 |
| format | Article |
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The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/66.964323</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Alkaline cleaning ; Ammonium hydroxide ; Applied sciences ; Chaos ; Chelating ; Chemicals ; Citric acid ; Cleaning ; Electronics ; EPROM ; Exact sciences and technology ; Impurities ; Interfaces ; Microelectronic fabrication (materials and surfaces technology) ; Oxalic acid ; Planarization ; Rough surfaces ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(IEEE) 2001</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-74b43a78febd0aa4bb7d201f93044abbc29ee4d5a0efac9721f9d099f5edc83a3</citedby><cites>FETCH-LOGICAL-c428t-74b43a78febd0aa4bb7d201f93044abbc29ee4d5a0efac9721f9d099f5edc83a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/964323$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23911,23912,25120,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/964323$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14099603$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pan, Tung Ming</creatorcontrib><creatorcontrib>Lei, Tan Fu</creatorcontrib><creatorcontrib>Ko, Fu Hsiang</creatorcontrib><creatorcontrib>Chao, Tien Sheng</creatorcontrib><creatorcontrib>Chiu, Tzu Huan</creatorcontrib><creatorcontrib>Lee, Ying Hao</creatorcontrib><creatorcontrib>Lu, Chih Peng</creatorcontrib><title>Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film</title><title>IEEE transactions on semiconductor manufacturing</title><addtitle>TSM</addtitle><description>In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors.</description><subject>Alkaline cleaning</subject><subject>Ammonium hydroxide</subject><subject>Applied sciences</subject><subject>Chaos</subject><subject>Chelating</subject><subject>Chemicals</subject><subject>Citric acid</subject><subject>Cleaning</subject><subject>Electronics</subject><subject>EPROM</subject><subject>Exact sciences and technology</subject><subject>Impurities</subject><subject>Interfaces</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Oxalic acid</subject><subject>Planarization</subject><subject>Rough surfaces</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Slurries</subject><subject>Surface contamination</subject><subject>Surface roughness</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0c9rFDEUB_BQFLpWD157CkIrHqbm90yOZak_oKKgnodM5qXNkk2myWyl_70ZdmnBgz3l8D7vm8d7CL2l5IJSoj8qdaGV4IwfoRWVsmsYF_IFWpFOi0ZJ0h6jV6VsCKFC6HaFNuu0nUz2JUWcHI7pHgK2AUz08QaXFHazT7HgP36-xfcVpl3B9haCmRdgbiDOBbuU8ZTK3Ky__XjqrpFTCg_NT4-dD9vX6KUzocCbw3uCfn-6-rX-0lx___x1fXndWMG6uWnFILhpOwfDSIwRw9COjFCnORHCDINlGkCM0hBwxuqW1dJItHYSRttxw0_Q-33ulNPdDsrcb32xEIKJUKfvNRV1Q5TxKs__K9lCW0mfhx1jQpD2eahU_VvLCt_9Azdpl2PdS681V5J1fJnvwx7ZnErJ4Pop-63JDz0l_XLuXql-f-5qzw6BplgTXDbR-vLUIOqKFFnc6d55AHgsH0L-Ajwysjs</recordid><startdate>20011101</startdate><enddate>20011101</enddate><creator>Pan, Tung Ming</creator><creator>Lei, Tan Fu</creator><creator>Ko, Fu Hsiang</creator><creator>Chao, Tien Sheng</creator><creator>Chiu, Tzu Huan</creator><creator>Lee, Ying Hao</creator><creator>Lu, Chih Peng</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7TB</scope><scope>FR3</scope><scope>F28</scope></search><sort><creationdate>20011101</creationdate><title>Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film</title><author>Pan, Tung Ming ; Lei, Tan Fu ; Ko, Fu Hsiang ; Chao, Tien Sheng ; Chiu, Tzu Huan ; Lee, Ying Hao ; Lu, Chih Peng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-74b43a78febd0aa4bb7d201f93044abbc29ee4d5a0efac9721f9d099f5edc83a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Alkaline cleaning</topic><topic>Ammonium hydroxide</topic><topic>Applied sciences</topic><topic>Chaos</topic><topic>Chelating</topic><topic>Chemicals</topic><topic>Citric acid</topic><topic>Cleaning</topic><topic>Electronics</topic><topic>EPROM</topic><topic>Exact sciences and technology</topic><topic>Impurities</topic><topic>Interfaces</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Oxalic acid</topic><topic>Planarization</topic><topic>Rough surfaces</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Slurries</topic><topic>Surface contamination</topic><topic>Surface roughness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pan, Tung Ming</creatorcontrib><creatorcontrib>Lei, Tan Fu</creatorcontrib><creatorcontrib>Ko, Fu Hsiang</creatorcontrib><creatorcontrib>Chao, Tien Sheng</creatorcontrib><creatorcontrib>Chiu, Tzu Huan</creatorcontrib><creatorcontrib>Lee, Ying Hao</creatorcontrib><creatorcontrib>Lu, Chih Peng</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pan, Tung Ming</au><au>Lei, Tan Fu</au><au>Ko, Fu Hsiang</au><au>Chao, Tien Sheng</au><au>Chiu, Tzu Huan</au><au>Lee, Ying Hao</au><au>Lu, Chih Peng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2001-11-01</date><risdate>2001</risdate><volume>14</volume><issue>4</issue><spage>365</spage><epage>371</epage><pages>365-371</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/66.964323</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Alkaline cleaning Ammonium hydroxide Applied sciences Chaos Chelating Chemicals Citric acid Cleaning Electronics EPROM Exact sciences and technology Impurities Interfaces Microelectronic fabrication (materials and surfaces technology) Oxalic acid Planarization Rough surfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Slurries Surface contamination Surface roughness |
| title | Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film |
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