Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination

This work demonstrates vertical \boldsymbol {\beta } -Ga 2 O 3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm 2 without edge termination. The unreliable surface on the top of \sim {1.2}\times {10} ^{{16}} cm −3 drift region, which naturally formed in air, was...

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Veröffentlicht in:	IEEE electron device letters 2022-02, Vol.43 (2), p.264-267
Hauptverfasser:	He, Qiming, Hao, Weibing, Zhou, Xuanze, Li, Yu, Zhou, Kai, Chen, Chen, Xiong, Wenhao, Jian, Guangzhong, Xu, Guangwei, Zhao, Xiaolong, Wu, Xiaojun, Zhu, Junfa, Long, Shibing
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">β -gallium oxide air exposure Figure of merit Gallium Gallium oxides Inductively coupled plasma Leakage current Leakage currents Performance evaluation Plasma etching Rough surfaces Schottky barrier diode Schottky diodes Surface roughness Surface treatment
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