Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

To realize the complementary circuit on the GaN-on-Si platform, an investigation of p-channel heterostructure field-effect transistors (p-HFETs) is necessary. In this study, an analytical model for the estimation of the threshold voltage ( {V}_{\text {TH}} ) for GaN-based p-HFETs was developed. In t...

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