Memristor Based on TiOx/Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics

Flexible memristor is one of the most promising wearable devices for abundant data storage and processing. In this work, interface engineering by inserting the Al 2 O 3 barrier layer is carried out to construct Pt/TiO x /Al 2 O 3 /Pt/indium tin oxide (ITO) flexible artificial synapse device. The mem...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-01, Vol.69 (1), p.375-379
Hauptverfasser:	Wu, Facai, Cao, Peng, Peng, Zehui, Ke, Shanwu, Cheng, Gong, Cao, Guangsen, Jiang, Bei, Ye, Cong
Format:	Artikel
Sprache:	eng
Schlagworte:	Bending Flexible memristor Memristors pattern recognition Resistance Substrates Switches Synapses synaptic plasticity Voltage
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