Interferometric techniques for dielectric trench etch applications

In this paper, we present an in-situ interferometric technique to control the trench depth for etching various type of patterned dielectric films, including silicon oxide, low-k black diamond, and low k SILK materials. We present the data on etching oxide trench wafers with various pattern density o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Frum, C., Zhifeng Sui, Hongching Shan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Automatic control Dielectric films Dielectric materials Dielectric substrates Etching Optical films Optical interferometry Optical polarization Optical surface waves Resists
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