Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance
In this work, we first used a new 2-D semiconductor material Bi 2 O 2 Se for optical fiber surface plasmon resonance (SPR) sensor sensitization, proposed, and validated a U-shaped optical fiber SPR sensor with Au film-Bi 2 O 2 Se sandwich structure. The finite element simulation results illustrate t...
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| Veröffentlicht in: | IEEE transactions on instrumentation and measurement 2022, Vol.71, p.1-8 |
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| container_title | IEEE transactions on instrumentation and measurement |
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| creator | Wang, Qi Du, Na-Na Zhao, Wan-Ming Wang, Lei Cong, Xue-Wei Zhu, Ai-Song Qiu, Feng-Mei Zhang, Ke-Ke |
| description | In this work, we first used a new 2-D semiconductor material Bi 2 O 2 Se for optical fiber surface plasmon resonance (SPR) sensor sensitization, proposed, and validated a U-shaped optical fiber SPR sensor with Au film-Bi 2 O 2 Se sandwich structure. The finite element simulation results illustrate that the electric field strength on the surface is 2.08 times higher than that of the pure Au film, which excites a stronger SPR phenomenon thus leading to a high sensitivity of the sensor. The effect of the radius on the sensor performance was investigated, and the optimal structural parameters were derived to fabricate the sensing probes. The RI sensitivity of the presented sensor is 6827.41 nm/RIU, 1.98 times superior to that of the pure Au film U-shaped optical SPR sensor. The sensor is insensitive to temperature fluctuations and has good repetitive and environmental stability. The proposed sensor has good potential for future applications in biomass detection, which also indicates that Bi 2 O 2 Se has good prospects for future applications in optoelectronic devices. |
| doi_str_mv | 10.1109/TIM.2021.3129871 |
| format | Article |
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The finite element simulation results illustrate that the electric field strength on the surface is 2.08 times higher than that of the pure Au film, which excites a stronger SPR phenomenon thus leading to a high sensitivity of the sensor. The effect of the radius on the sensor performance was investigated, and the optimal structural parameters were derived to fabricate the sensing probes. The RI sensitivity of the presented sensor is 6827.41 nm/RIU, 1.98 times superior to that of the pure Au film U-shaped optical SPR sensor. The sensor is insensitive to temperature fluctuations and has good repetitive and environmental stability. The proposed sensor has good potential for future applications in biomass detection, which also indicates that Bi 2 O 2 Se has good prospects for future applications in optoelectronic devices.</description><identifier>ISSN: 0018-9456</identifier><identifier>EISSN: 1557-9662</identifier><identifier>DOI: 10.1109/TIM.2021.3129871</identifier><identifier>CODEN: IEIMAO</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bi₂O₂Se ; Electric field strength ; Electric fields ; enhanced electric field strength ; Finite element method ; Gold ; narrow band gap ; Optical fiber dispersion ; Optical fiber sensors ; Optical fibers ; Optical surface waves ; Optoelectronic devices ; Parameter sensitivity ; Sandwich structures ; Semiconductor materials ; Sensitivity ; sensitivity enhancement ; Sensors ; Surface plasmon resonance ; surface plasmon resonance (SPR) ; U-bent fiber ; ultrahigh carrier mobility</subject><ispartof>IEEE transactions on instrumentation and measurement, 2022, Vol.71, p.1-8</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-7746-9013 ; 0000-0003-2189-7649 ; 0000-0002-7659-0508 ; 0000-0003-0836-3802 ; 0000-0002-1328-8571 ; 0000-0003-2958-2158 ; 0000-0002-4583-2092 ; 0000-0002-5669-1504</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9628064$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4010,27900,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9628064$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Du, Na-Na</creatorcontrib><creatorcontrib>Zhao, Wan-Ming</creatorcontrib><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Cong, Xue-Wei</creatorcontrib><creatorcontrib>Zhu, Ai-Song</creatorcontrib><creatorcontrib>Qiu, Feng-Mei</creatorcontrib><creatorcontrib>Zhang, Ke-Ke</creatorcontrib><title>Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance</title><title>IEEE transactions on instrumentation and measurement</title><addtitle>TIM</addtitle><description>In this work, we first used a new 2-D semiconductor material Bi 2 O 2 Se for optical fiber surface plasmon resonance (SPR) sensor sensitization, proposed, and validated a U-shaped optical fiber SPR sensor with Au film-Bi 2 O 2 Se sandwich structure. The finite element simulation results illustrate that the electric field strength on the surface is 2.08 times higher than that of the pure Au film, which excites a stronger SPR phenomenon thus leading to a high sensitivity of the sensor. The effect of the radius on the sensor performance was investigated, and the optimal structural parameters were derived to fabricate the sensing probes. The RI sensitivity of the presented sensor is 6827.41 nm/RIU, 1.98 times superior to that of the pure Au film U-shaped optical SPR sensor. The sensor is insensitive to temperature fluctuations and has good repetitive and environmental stability. The proposed sensor has good potential for future applications in biomass detection, which also indicates that Bi 2 O 2 Se has good prospects for future applications in optoelectronic devices.</description><subject>Bi₂O₂Se</subject><subject>Electric field strength</subject><subject>Electric fields</subject><subject>enhanced electric field strength</subject><subject>Finite element method</subject><subject>Gold</subject><subject>narrow band gap</subject><subject>Optical fiber dispersion</subject><subject>Optical fiber sensors</subject><subject>Optical fibers</subject><subject>Optical surface waves</subject><subject>Optoelectronic devices</subject><subject>Parameter sensitivity</subject><subject>Sandwich structures</subject><subject>Semiconductor materials</subject><subject>Sensitivity</subject><subject>sensitivity enhancement</subject><subject>Sensors</subject><subject>Surface plasmon resonance</subject><subject>surface plasmon resonance (SPR)</subject><subject>U-bent fiber</subject><subject>ultrahigh carrier mobility</subject><issn>0018-9456</issn><issn>1557-9662</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjcFLwzAYxYMoOKd3wUvBc-eXpEma4zacG0wm63YuWfPFZXRtbVph_72FyTs83uPHe4Q8U5hQCvptt_qcMGB0winTqaI3ZESFULGWkt2SEQBNY50IeU8eQjgBgJKJGhG_9N_H8hJlWAXf-V-M9nF2NA3aaNN0vjBltPAHbKMtutYUXX3GbkgzEwairqKZZxuWYTwNwYdu6LK-dabA6Ks04TwAWwx1ZaoCH8mdM2XAp38fk_3ifTdfxuvNx2o-XceeAe9iywohhU5BF1IYBVJRDgebgKCOSnQ2dUpIZ5nTxhqggwqBlkmw9CBdwsfk9brbtPVPj6HLT3XfVsNlziQXkEiu-EC9XCmPiHnT-rNpL7mWLAWZ8D9zEmHP</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Wang, Qi</creator><creator>Du, Na-Na</creator><creator>Zhao, Wan-Ming</creator><creator>Wang, Lei</creator><creator>Cong, Xue-Wei</creator><creator>Zhu, Ai-Song</creator><creator>Qiu, Feng-Mei</creator><creator>Zhang, Ke-Ke</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7746-9013</orcidid><orcidid>https://orcid.org/0000-0003-2189-7649</orcidid><orcidid>https://orcid.org/0000-0002-7659-0508</orcidid><orcidid>https://orcid.org/0000-0003-0836-3802</orcidid><orcidid>https://orcid.org/0000-0002-1328-8571</orcidid><orcidid>https://orcid.org/0000-0003-2958-2158</orcidid><orcidid>https://orcid.org/0000-0002-4583-2092</orcidid><orcidid>https://orcid.org/0000-0002-5669-1504</orcidid></search><sort><creationdate>2022</creationdate><title>Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance</title><author>Wang, Qi ; Du, Na-Na ; Zhao, Wan-Ming ; Wang, Lei ; Cong, Xue-Wei ; Zhu, Ai-Song ; Qiu, Feng-Mei ; Zhang, Ke-Ke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-d2c5659809c65a7067130bd4051f16efd8f756fd2f9ada01010c5ed260d1b6f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bi₂O₂Se</topic><topic>Electric field strength</topic><topic>Electric fields</topic><topic>enhanced electric field strength</topic><topic>Finite element method</topic><topic>Gold</topic><topic>narrow band gap</topic><topic>Optical fiber dispersion</topic><topic>Optical fiber sensors</topic><topic>Optical fibers</topic><topic>Optical surface waves</topic><topic>Optoelectronic devices</topic><topic>Parameter sensitivity</topic><topic>Sandwich structures</topic><topic>Semiconductor materials</topic><topic>Sensitivity</topic><topic>sensitivity enhancement</topic><topic>Sensors</topic><topic>Surface plasmon resonance</topic><topic>surface plasmon resonance (SPR)</topic><topic>U-bent fiber</topic><topic>ultrahigh carrier mobility</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Du, Na-Na</creatorcontrib><creatorcontrib>Zhao, Wan-Ming</creatorcontrib><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Cong, Xue-Wei</creatorcontrib><creatorcontrib>Zhu, Ai-Song</creatorcontrib><creatorcontrib>Qiu, Feng-Mei</creatorcontrib><creatorcontrib>Zhang, Ke-Ke</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on instrumentation and measurement</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Qi</au><au>Du, Na-Na</au><au>Zhao, Wan-Ming</au><au>Wang, Lei</au><au>Cong, Xue-Wei</au><au>Zhu, Ai-Song</au><au>Qiu, Feng-Mei</au><au>Zhang, Ke-Ke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance</atitle><jtitle>IEEE transactions on instrumentation and measurement</jtitle><stitle>TIM</stitle><date>2022</date><risdate>2022</risdate><volume>71</volume><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>0018-9456</issn><eissn>1557-9662</eissn><coden>IEIMAO</coden><abstract>In this work, we first used a new 2-D semiconductor material Bi 2 O 2 Se for optical fiber surface plasmon resonance (SPR) sensor sensitization, proposed, and validated a U-shaped optical fiber SPR sensor with Au film-Bi 2 O 2 Se sandwich structure. The finite element simulation results illustrate that the electric field strength on the surface is 2.08 times higher than that of the pure Au film, which excites a stronger SPR phenomenon thus leading to a high sensitivity of the sensor. The effect of the radius on the sensor performance was investigated, and the optimal structural parameters were derived to fabricate the sensing probes. The RI sensitivity of the presented sensor is 6827.41 nm/RIU, 1.98 times superior to that of the pure Au film U-shaped optical SPR sensor. The sensor is insensitive to temperature fluctuations and has good repetitive and environmental stability. The proposed sensor has good potential for future applications in biomass detection, which also indicates that Bi 2 O 2 Se has good prospects for future applications in optoelectronic devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIM.2021.3129871</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-7746-9013</orcidid><orcidid>https://orcid.org/0000-0003-2189-7649</orcidid><orcidid>https://orcid.org/0000-0002-7659-0508</orcidid><orcidid>https://orcid.org/0000-0003-0836-3802</orcidid><orcidid>https://orcid.org/0000-0002-1328-8571</orcidid><orcidid>https://orcid.org/0000-0003-2958-2158</orcidid><orcidid>https://orcid.org/0000-0002-4583-2092</orcidid><orcidid>https://orcid.org/0000-0002-5669-1504</orcidid></addata></record> |
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| subjects | Bi₂O₂Se Electric field strength Electric fields enhanced electric field strength Finite element method Gold narrow band gap Optical fiber dispersion Optical fiber sensors Optical fibers Optical surface waves Optoelectronic devices Parameter sensitivity Sandwich structures Semiconductor materials Sensitivity sensitivity enhancement Sensors Surface plasmon resonance surface plasmon resonance (SPR) U-bent fiber ultrahigh carrier mobility |
| title | Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance |
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