A GaAs p-HEMT Distributed Drain Mixer With Low LO Drive Power, High Isolation, and Zero Power Consumption

This paper presents a balanced distributed drain mixer fabricated in a 0.25- \mu \text{m} GaAs p-HEMT technology. The balanced distributed mixer combines two single-ended distributed mixers with an on-chip RF balun and LO divider integrated for improving isolation performance. Each single-ended mix...

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