Epoxy Molding Compound Filler Clogging Simulation During Integrated Circuit Encapsulation Process
As IC components become denser and smaller in a package, more problems emerge. In the mold filling process, because epoxy molding compound (EMC) contains approximately 80 wt.% silica fillers, the fillers may clog at the gate of gap if the gap height between the component and the substrate is too sma...
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Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2022-01, Vol.12 (1), p.174-184 |
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Sprache: | eng |
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Zusammenfassung: | As IC components become denser and smaller in a package, more problems emerge. In the mold filling process, because epoxy molding compound (EMC) contains approximately 80 wt.% silica fillers, the fillers may clog at the gate of gap if the gap height between the component and the substrate is too small. This clogging will cause a popcorn effect due to the high resin content in the gap. In order to determine the EMC filling process in the mold cavity and the relation between the gap height and the filler size, we simulate the EMC filling process and the EMC filler concentration distribution in the mold cavity using mold flow analysis software and then use computational fluid dynamics-discrete element method (CFD-DEM) coupling method to simulate the EMC filler motion to determine the relationship between gap height and filler size and the factors that affect filler clogging. Based on the mold flow analysis results, the filler concentration was higher at the gate of gap than in other regions, and the filler concentration at the gate of gap for the 30- \mu \text{m} gap-height model was higher than that for the 50- \mu \text{m} gap-height model. Based on the DEM-CFD coupling results, particles with a single diameter larger than one-half of the gap height caused particle clogging the gate of gap, and particles with a mean particle size larger than one-third of the gap height caused particle clogging the gate of gap. |
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ISSN: | 2156-3950 2156-3985 |
DOI: | 10.1109/TCPMT.2021.3129886 |