Aging Effects and Latent Interface-Trap Buildup in MOS Transistors
Effects of ~35 years of aging during storage are investigated on the radiation response and 1/ f noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO 2 . Short-term interface-trap buildup during irradiation is enhanced significantly, relative to that observed in 1989, 19...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2021-12, Vol.68 (12), p.2724-2735 |
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| creator | Ding, Jiarui Zhang, En Xia Li, Kan Luo, Xuyi Gorchichko, Mariia Fleetwood, Daniel M. |
| description | Effects of ~35 years of aging during storage are investigated on the radiation response and 1/ f noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO 2 . Short-term interface-trap buildup during irradiation is enhanced significantly, relative to that observed in 1989, 1997, and 2008. In contrast, a similar latent interface-trap buildup is observed for aged pMOS devices irradiated and annealed at room and elevated temperatures at positive bias in this and earlier studies. The significant latent interface-trap buildup is observed for nMOS devices irradiated at 0 V and annealed at room and elevated temperatures under positive bias, a condition not evaluated in prior work. Results strongly suggest that latent interface-trap buildup is due to H 2 diffusion and dissociation at charged or dipolar O vacancies in SiO 2 , followed by proton transport to the Si/SiO 2 interface and reactions with Si-H complexes. Models that attribute latent interface-trap buildup to long-term proton trapping at O vacancies in SiO 2 appear to be ruled out by these results. Additional insight is provided into mechanisms of postirradiation interface- and border-trap buildup after long-term MOS device storage. |
| doi_str_mv | 10.1109/TNS.2021.3128835 |
| format | Article |
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Short-term interface-trap buildup during irradiation is enhanced significantly, relative to that observed in 1989, 1997, and 2008. In contrast, a similar latent interface-trap buildup is observed for aged pMOS devices irradiated and annealed at room and elevated temperatures at positive bias in this and earlier studies. The significant latent interface-trap buildup is observed for nMOS devices irradiated at 0 V and annealed at room and elevated temperatures under positive bias, a condition not evaluated in prior work. Results strongly suggest that latent interface-trap buildup is due to H 2 diffusion and dissociation at charged or dipolar O vacancies in SiO 2 , followed by proton transport to the Si/SiO 2 interface and reactions with Si-H complexes. Models that attribute latent interface-trap buildup to long-term proton trapping at O vacancies in SiO 2 appear to be ruled out by these results. 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Short-term interface-trap buildup during irradiation is enhanced significantly, relative to that observed in 1989, 1997, and 2008. In contrast, a similar latent interface-trap buildup is observed for aged pMOS devices irradiated and annealed at room and elevated temperatures at positive bias in this and earlier studies. The significant latent interface-trap buildup is observed for nMOS devices irradiated at 0 V and annealed at room and elevated temperatures under positive bias, a condition not evaluated in prior work. Results strongly suggest that latent interface-trap buildup is due to H 2 diffusion and dissociation at charged or dipolar O vacancies in SiO 2 , followed by proton transport to the Si/SiO 2 interface and reactions with Si-H complexes. Models that attribute latent interface-trap buildup to long-term proton trapping at O vacancies in SiO 2 appear to be ruled out by these results. 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Short-term interface-trap buildup during irradiation is enhanced significantly, relative to that observed in 1989, 1997, and 2008. In contrast, a similar latent interface-trap buildup is observed for aged pMOS devices irradiated and annealed at room and elevated temperatures at positive bias in this and earlier studies. The significant latent interface-trap buildup is observed for nMOS devices irradiated at 0 V and annealed at room and elevated temperatures under positive bias, a condition not evaluated in prior work. Results strongly suggest that latent interface-trap buildup is due to H 2 diffusion and dissociation at charged or dipolar O vacancies in SiO 2 , followed by proton transport to the Si/SiO 2 interface and reactions with Si-H complexes. Models that attribute latent interface-trap buildup to long-term proton trapping at O vacancies in SiO 2 appear to be ruled out by these results. 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| subjects | 1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f noise Aging Annealing Bias border traps High temperature Hydrogen interface traps Irradiation Low-frequency noise MOS devices MOS transistors MOSFET oxide traps Protons Radiation Radiation effects Semiconductor devices Silicon dioxide Transistors Vacancies |
| title | Aging Effects and Latent Interface-Trap Buildup in MOS Transistors |
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