A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

A 320 \times 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- \mu \text{m} two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are propo...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-06, Vol.69 (6), p.2858-2864
Hauptverfasser:	Zhang, Bing, Hu, Congzhen, Lai, Junhua, Xin, Youze, Guo, Zhuoqi, Xue, Zhongming, Dong, Li, Wang, Chi, Lei, Shuyu, Zhang, Guohe, Geng, Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Demodulation Doping Electric fields Electric potential Front-side illumination (FSI) indirect time-of-flight (i-ToF) image sensor Logic gates low power consumption Modulation pinned layer doping potential buffer region (PBR) Power consumption pump gate modulator (PGM) Semiconductor process modeling Sensors Voltage
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