A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications
A 320 \times 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- \mu \text{m} two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are propo...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-06, Vol.69 (6), p.2858-2864 |
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| container_title | IEEE transactions on electron devices |
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| creator | Zhang, Bing Hu, Congzhen Lai, Junhua Xin, Youze Guo, Zhuoqi Xue, Zhongming Dong, Li Wang, Chi Lei, Shuyu Zhang, Guohe Geng, Li |
| description | A 320 \times 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- \mu \text{m} two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m. |
| doi_str_mv | 10.1109/TED.2021.3123045 |
| format | Article |
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Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2021.3123045</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Demodulation ; Doping ; Electric fields ; Electric potential ; Front-side illumination (FSI) ; indirect time-of-flight (i-ToF) image sensor ; Logic gates ; low power consumption ; Modulation ; pinned layer doping ; potential buffer region (PBR) ; Power consumption ; pump gate modulator (PGM) ; Semiconductor process modeling ; Sensors ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.2858-2864</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-fbb8325981677598ca8662e0eb1a834384880c1f40dc59749719896f6f2595f63</citedby><cites>FETCH-LOGICAL-c291t-fbb8325981677598ca8662e0eb1a834384880c1f40dc59749719896f6f2595f63</cites><orcidid>0000-0003-0406-7408 ; 0000-0001-6682-7084 ; 0000-0001-8092-8009 ; 0000-0002-9373-9976 ; 0000-0003-4002-9281 ; 0000-0002-6713-8034 ; 0000-0001-7164-6579</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9604075$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9604075$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhang, Bing</creatorcontrib><creatorcontrib>Hu, Congzhen</creatorcontrib><creatorcontrib>Lai, Junhua</creatorcontrib><creatorcontrib>Xin, Youze</creatorcontrib><creatorcontrib>Guo, Zhuoqi</creatorcontrib><creatorcontrib>Xue, Zhongming</creatorcontrib><creatorcontrib>Dong, Li</creatorcontrib><creatorcontrib>Wang, Chi</creatorcontrib><creatorcontrib>Lei, Shuyu</creatorcontrib><creatorcontrib>Zhang, Guohe</creatorcontrib><creatorcontrib>Geng, Li</creatorcontrib><title>A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[A 320 <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.]]></description><subject>Capacitance</subject><subject>Demodulation</subject><subject>Doping</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Front-side illumination (FSI)</subject><subject>indirect time-of-flight (i-ToF) image sensor</subject><subject>Logic gates</subject><subject>low power consumption</subject><subject>Modulation</subject><subject>pinned layer doping</subject><subject>potential buffer region (PBR)</subject><subject>Power consumption</subject><subject>pump gate modulator (PGM)</subject><subject>Semiconductor process modeling</subject><subject>Sensors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1rAjEQxUNpodb2Xugl0HNsvjabHMVWKygKbukxxDXRld3NNruL9L9vROlheAzz3gzzA-CZ4BEhWL1lH-8jiikZMUIZ5skNGJAkSZESXNyCAcZEIsUkuwcPbXuMreCcDsB-DLOTR5lp4LzeFcHmHcyKyiLv0LQs9ocOTparDZxXZm_hxtatD_C76A5w3VcNnJnOwqXf9aXp4sDFWvgTWvuTDXDcNGWRm67wdfsI7pwpW_t01SH4mn5kk0-0WM3mk_EC5VSRDrntVjKaKElEmkbJjRSCWmy3xEjGmeRS4pw4jnd5olKuUqKkEk64GEqcYEPwetnbBP_T27bTR9-HOp7UVAgVv1acRhe-uPLg2zZYp5tQVCb8aoL1GaeOOPUZp77ijJGXS6Sw1v7blcAcpwn7A79ebgI</recordid><startdate>202206</startdate><enddate>202206</enddate><creator>Zhang, Bing</creator><creator>Hu, Congzhen</creator><creator>Lai, Junhua</creator><creator>Xin, Youze</creator><creator>Guo, Zhuoqi</creator><creator>Xue, Zhongming</creator><creator>Dong, Li</creator><creator>Wang, Chi</creator><creator>Lei, Shuyu</creator><creator>Zhang, Guohe</creator><creator>Geng, Li</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0406-7408</orcidid><orcidid>https://orcid.org/0000-0001-6682-7084</orcidid><orcidid>https://orcid.org/0000-0001-8092-8009</orcidid><orcidid>https://orcid.org/0000-0002-9373-9976</orcidid><orcidid>https://orcid.org/0000-0003-4002-9281</orcidid><orcidid>https://orcid.org/0000-0002-6713-8034</orcidid><orcidid>https://orcid.org/0000-0001-7164-6579</orcidid></search><sort><creationdate>202206</creationdate><title>A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications</title><author>Zhang, Bing ; Hu, Congzhen ; Lai, Junhua ; Xin, Youze ; Guo, Zhuoqi ; Xue, Zhongming ; Dong, Li ; Wang, Chi ; Lei, Shuyu ; Zhang, Guohe ; Geng, Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-fbb8325981677598ca8662e0eb1a834384880c1f40dc59749719896f6f2595f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Capacitance</topic><topic>Demodulation</topic><topic>Doping</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>Front-side illumination (FSI)</topic><topic>indirect time-of-flight (i-ToF) image sensor</topic><topic>Logic gates</topic><topic>low power consumption</topic><topic>Modulation</topic><topic>pinned layer doping</topic><topic>potential buffer region (PBR)</topic><topic>Power consumption</topic><topic>pump gate modulator (PGM)</topic><topic>Semiconductor process modeling</topic><topic>Sensors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Bing</creatorcontrib><creatorcontrib>Hu, Congzhen</creatorcontrib><creatorcontrib>Lai, Junhua</creatorcontrib><creatorcontrib>Xin, Youze</creatorcontrib><creatorcontrib>Guo, Zhuoqi</creatorcontrib><creatorcontrib>Xue, Zhongming</creatorcontrib><creatorcontrib>Dong, Li</creatorcontrib><creatorcontrib>Wang, Chi</creatorcontrib><creatorcontrib>Lei, Shuyu</creatorcontrib><creatorcontrib>Zhang, Guohe</creatorcontrib><creatorcontrib>Geng, Li</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhang, Bing</au><au>Hu, Congzhen</au><au>Lai, Junhua</au><au>Xin, Youze</au><au>Guo, Zhuoqi</au><au>Xue, Zhongming</au><au>Dong, Li</au><au>Wang, Chi</au><au>Lei, Shuyu</au><au>Zhang, Guohe</au><au>Geng, Li</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-06</date><risdate>2022</risdate><volume>69</volume><issue>6</issue><spage>2858</spage><epage>2864</epage><pages>2858-2864</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[A 320 <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2021.3123045</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-0406-7408</orcidid><orcidid>https://orcid.org/0000-0001-6682-7084</orcidid><orcidid>https://orcid.org/0000-0001-8092-8009</orcidid><orcidid>https://orcid.org/0000-0002-9373-9976</orcidid><orcidid>https://orcid.org/0000-0003-4002-9281</orcidid><orcidid>https://orcid.org/0000-0002-6713-8034</orcidid><orcidid>https://orcid.org/0000-0001-7164-6579</orcidid></addata></record> |
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| subjects | Capacitance Demodulation Doping Electric fields Electric potential Front-side illumination (FSI) indirect time-of-flight (i-ToF) image sensor Logic gates low power consumption Modulation pinned layer doping potential buffer region (PBR) Power consumption pump gate modulator (PGM) Semiconductor process modeling Sensors Voltage |
| title | A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications |
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