A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration
A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented...
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| creator | Johnson, F.S. Ai, J. Dunn, S. El Kareh, B. Erdeljac, J. John, S. Benaissa, K. Bellaour, A. Benna, B. Hodgson, L. Hoffleisch, G. Hutter, L. Jaumann, M. Jumpertz, R. Mercer, M. Nair, M. Seitchik, J. Shen, C. Schiekofer, M. Scharnagl, T. Schimpf, K. Schulz, U. Staufer, B. Stroth, L. Tatman, D. Thompson, M. Williams, B. Violette, K. |
| description | A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented as part of a 0.25/spl mu/m production RF technology that includes SiGe NPNs, 14GHz PNPs, very high Q passives, high resistance substrates, drain-extended CMOS (DEMOS) and fully isolated CMOS wells. In addition to component characterization, measurements of fabricated WCDMA circuits are presented that demonstrate low power, low noise circuit operation. |
| doi_str_mv | 10.1109/BIPOL.2001.957856 |
| format | Conference Proceeding |
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In addition to component characterization, measurements of fabricated WCDMA circuits are presented that demonstrate low power, low noise circuit operation.</description><subject>Circuits</subject><subject>Costs</subject><subject>Epitaxial growth</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Manufacturing</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>Radio frequency</subject><subject>Silicon germanium</subject><isbn>9780780370197</isbn><isbn>0780370198</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jsFqwkAURQdEUDQfoKv3AyZv1JjMUkVtQbC0BZcyyjN5MpnEZGYRv17Brns5cBZnc4UYSQylRBWtPr8O-3CKKEMVJ2m86IhAJSm-mCUoVdITQdPc8LUYF2ou--K4hJyz3LRQaOuv-uJ8rc-GAMNpHDWVgcJHBXxvwdElt6Upsxa8Y8MPthlo8JbvnuCHdwRsHWW1dlzaoehetWko-PNAjLeb3_XHhInoVNVc6Lo9vV_O_o1PYStAww</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Johnson, F.S.</creator><creator>Ai, J.</creator><creator>Dunn, S.</creator><creator>El Kareh, B.</creator><creator>Erdeljac, J.</creator><creator>John, S.</creator><creator>Benaissa, K.</creator><creator>Bellaour, A.</creator><creator>Benna, B.</creator><creator>Hodgson, L.</creator><creator>Hoffleisch, G.</creator><creator>Hutter, L.</creator><creator>Jaumann, M.</creator><creator>Jumpertz, R.</creator><creator>Mercer, M.</creator><creator>Nair, M.</creator><creator>Seitchik, J.</creator><creator>Shen, C.</creator><creator>Schiekofer, M.</creator><creator>Scharnagl, T.</creator><creator>Schimpf, K.</creator><creator>Schulz, U.</creator><creator>Staufer, B.</creator><creator>Stroth, L.</creator><creator>Tatman, D.</creator><creator>Thompson, M.</creator><creator>Williams, B.</creator><creator>Violette, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration</title><author>Johnson, F.S. ; 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| identifier | ISBN: 9780780370197 |
| ispartof | Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.56-59 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuits Costs Epitaxial growth Germanium silicon alloys Heterojunction bipolar transistors Manufacturing Noise figure Noise measurement Radio frequency Silicon germanium |
| title | A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration |
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