A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration

A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration

A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented...

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Hauptverfasser: Johnson, F.S., Ai, J., Dunn, S., El Kareh, B., Erdeljac, J., John, S., Benaissa, K., Bellaour, A., Benna, B., Hodgson, L., Hoffleisch, G., Hutter, L., Jaumann, M., Jumpertz, R., Mercer, M., Nair, M., Seitchik, J., Shen, C., Schiekofer, M., Scharnagl, T., Schimpf, K., Schulz, U., Staufer, B., Stroth, L., Tatman, D., Thompson, M., Williams, B., Violette, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Costs
Epitaxial growth
Germanium silicon alloys
Heterojunction bipolar transistors
Manufacturing
Noise figure
Noise measurement
Radio frequency
Silicon germanium
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Zusammenfassung:A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented as part of a 0.25/spl mu/m production RF technology that includes SiGe NPNs, 14GHz PNPs, very high Q passives, high resistance substrates, drain-extended CMOS (DEMOS) and fully isolated CMOS wells. In addition to component characterization, measurements of fabricated WCDMA circuits are presented that demonstrate low power, low noise circuit operation.
DOI:10.1109/BIPOL.2001.957856