Edge-emitting microlasers with one active layer of quantum dots

High performance edge-emitting microlasers with deeply etched distributed Bragg reflectors (DBRs) were fabricated on an AlGaAs-GaAs laser structure with a single GaInAs quantum dot (QD) active layer. Mirror reflectivities well above 90% were achieved by third-order narrow air-gap Bragg reflectors wi...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2001-03, Vol.7 (2), p.300-305
Hauptverfasser:	Rennon, S., Avary, K., Klopf, F., Reithmaier, J.P., Forchel, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Air gaps Bragg reflectors Distributed Bragg reflectors Emission Etching Holes Land surface temperature Lasers Microlasers Mirrors Power generation Quantum dot lasers Quantum dots Quantum well lasers Threshold current Threshold currents
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