Investigations of an Influence of the Assembling Method of the Die to the Case on Thermal Parameters of IGBTs
This article presents the results of investigations illustrating the influence of the method of assembling the die of the insulated gate bipolar transistor (IGBT) to the base of the TO-220 lead frame on its thermal parameters. The properties of the tested semiconductor die and the methods of assembl...
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| Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1988-1996 |
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| container_end_page | 1996 |
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| container_issue | 11 |
| container_start_page | 1988 |
| container_title | IEEE transactions on components, packaging, and manufacturing technology (2011) |
| container_volume | 11 |
| creator | Gorecki, Pawel Gorecki, Krzysztof Kisiel, Ryszard Brzozowski, Ernest Bar, Jan Guziewicz, Marek |
| description | This article presents the results of investigations illustrating the influence of the method of assembling the die of the insulated gate bipolar transistor (IGBT) to the base of the TO-220 lead frame on its thermal parameters. The properties of the tested semiconductor die and the methods of assembling it in the case are presented. The measurement method used here, belonging to the indirect electrical methods, is carefully described. The obtained measurement results are shown and discussed to indicate which of the assembly methods of the die attachment to the case ensures the most effective heat dissipation. The results obtained for the tested devices point to soldering, and they are comparable with the results of measurements obtained for a commercial IGBT mounted in the same case. |
| doi_str_mv | 10.1109/TCPMT.2021.3108468 |
| format | Article |
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The properties of the tested semiconductor die and the methods of assembling it in the case are presented. The measurement method used here, belonging to the indirect electrical methods, is carefully described. The obtained measurement results are shown and discussed to indicate which of the assembly methods of the die attachment to the case ensures the most effective heat dissipation. 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(IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-1b9be0a95539f785b76340fb313bd46e2491f6910372816c1097f55bf4f274123</citedby><cites>FETCH-LOGICAL-c295t-1b9be0a95539f785b76340fb313bd46e2491f6910372816c1097f55bf4f274123</cites><orcidid>0000-0002-2132-5731 ; 0000-0001-5544-2373 ; 0000-0002-9857-8235</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9524693$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9524693$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gorecki, Pawel</creatorcontrib><creatorcontrib>Gorecki, Krzysztof</creatorcontrib><creatorcontrib>Kisiel, Ryszard</creatorcontrib><creatorcontrib>Brzozowski, Ernest</creatorcontrib><creatorcontrib>Bar, Jan</creatorcontrib><creatorcontrib>Guziewicz, Marek</creatorcontrib><title>Investigations of an Influence of the Assembling Method of the Die to the Case on Thermal Parameters of IGBTs</title><title>IEEE transactions on components, packaging, and manufacturing technology (2011)</title><addtitle>TCPMT</addtitle><description>This article presents the results of investigations illustrating the influence of the method of assembling the die of the insulated gate bipolar transistor (IGBT) to the base of the TO-220 lead frame on its thermal parameters. The properties of the tested semiconductor die and the methods of assembling it in the case are presented. The measurement method used here, belonging to the indirect electrical methods, is carefully described. The obtained measurement results are shown and discussed to indicate which of the assembly methods of the die attachment to the case ensures the most effective heat dissipation. The results obtained for the tested devices point to soldering, and they are comparable with the results of measurements obtained for a commercial IGBT mounted in the same case.</description><subject>Assembling</subject><subject>Insulated gate bipolar transistors</subject><subject>Insulated gate bipolar transistors (IGBTs)</subject><subject>Measurement methods</subject><subject>Packaging</subject><subject>Parameters</subject><subject>Semiconductor device measurement</subject><subject>Semiconductor devices</subject><subject>Sintering</subject><subject>Soldering</subject><subject>Temperature measurement</subject><subject>thermal measurements</subject><subject>thermal parameters</subject><subject>thermal phenomena</subject><subject>Thermal resistance</subject><subject>Thermodynamic properties</subject><issn>2156-3950</issn><issn>2156-3985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PwzAMhiMEEtPYH4BLJM4d-W5zHAVGpU3sUM5R2jlbp36MpEPi39N9gC-25fe15Qehe0qmlBL9lKerZT5lhNEppyQRKrlCI0alirhO5PV_LcktmoSwI0PIhMSEj1CTtd8Q-mpj-6prA-4cti3OWlcfoC3h2PdbwLMQoCnqqt3gJfTbbv03eKkA992pTG0Y9C3Ot-AbW-OV9baBHvxpazZ_zsMdunG2DjC55DH6fHvN0_do8THP0tkiKpmWfUQLXQCxWkquXZzIIlZcEFdwyou1UMCEpk5pSnjMEqrKAULspCyccCwWlPExejzv3fvu6zD8Z3bdwbfDScMUoUqoWMtBxc6q0ncheHBm76vG-h9DiTmSNSey5kjWXMgOpoezqQKAf4OWTCjN-S92-XJ-</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Gorecki, Pawel</creator><creator>Gorecki, Krzysztof</creator><creator>Kisiel, Ryszard</creator><creator>Brzozowski, Ernest</creator><creator>Bar, Jan</creator><creator>Guziewicz, Marek</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The properties of the tested semiconductor die and the methods of assembling it in the case are presented. The measurement method used here, belonging to the indirect electrical methods, is carefully described. The obtained measurement results are shown and discussed to indicate which of the assembly methods of the die attachment to the case ensures the most effective heat dissipation. The results obtained for the tested devices point to soldering, and they are comparable with the results of measurements obtained for a commercial IGBT mounted in the same case.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/TCPMT.2021.3108468</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-2132-5731</orcidid><orcidid>https://orcid.org/0000-0001-5544-2373</orcidid><orcidid>https://orcid.org/0000-0002-9857-8235</orcidid></addata></record> |
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| identifier | ISSN: 2156-3950 |
| ispartof | IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1988-1996 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Assembling Insulated gate bipolar transistors Insulated gate bipolar transistors (IGBTs) Measurement methods Packaging Parameters Semiconductor device measurement Semiconductor devices Sintering Soldering Temperature measurement thermal measurements thermal parameters thermal phenomena Thermal resistance Thermodynamic properties |
| title | Investigations of an Influence of the Assembling Method of the Die to the Case on Thermal Parameters of IGBTs |
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