Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions
We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycr...
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| Veröffentlicht in: | IEEE journal of photovoltaics 2021-09, Vol.11 (5), p.1149-1157 |
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| creator | Wehmeier, Nadine Kiefer, Fabian Brendemuhl, Till Mettner, Larissa Wolter, Sascha J. Haase, Felix Peibst, Robby Holthausen, Michael Mispelkamp, Dominik Mader, Christoph Daeschlein, Christian Wunnicke, Odo Kajari-Schroder, Sarah |
| description | We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm 2 are achieved for n + -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO 2 solar cell processing. In particular, for POLO 2 -IBC cells, a lean process flow is facilitated. |
| doi_str_mv | 10.1109/JPHOTOV.2021.3094131 |
| format | Article |
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The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm 2 are achieved for n + -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO 2 solar cell processing. In particular, for POLO 2 -IBC cells, a lean process flow is facilitated.</description><identifier>ISSN: 2156-3381</identifier><identifier>EISSN: 2156-3403</identifier><identifier>DOI: 10.1109/JPHOTOV.2021.3094131</identifier><identifier>CODEN: IJPEG8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Amorphous silicon ; Annealing ; Emitters ; Ink jet printing ; Inkjet printing ; interdigitated back contact (IBC) structure ; Junctions ; liquid silicon (LiSi) ink ; Oligomers ; passivating contacts ; Photovoltaic cells ; Polysilicon ; Silicon ; Silicon oxides ; silicon solar cells ; Solar cells ; Thickness measurement</subject><ispartof>IEEE journal of photovoltaics, 2021-09, Vol.11 (5), p.1149-1157</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm 2 are achieved for n + -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO 2 solar cell processing. In particular, for POLO 2 -IBC cells, a lean process flow is facilitated.</description><subject>Amorphous silicon</subject><subject>Annealing</subject><subject>Emitters</subject><subject>Ink jet printing</subject><subject>Inkjet printing</subject><subject>interdigitated back contact (IBC) structure</subject><subject>Junctions</subject><subject>liquid silicon (LiSi) ink</subject><subject>Oligomers</subject><subject>passivating contacts</subject><subject>Photovoltaic cells</subject><subject>Polysilicon</subject><subject>Silicon</subject><subject>Silicon oxides</subject><subject>silicon solar cells</subject><subject>Solar cells</subject><subject>Thickness measurement</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFtLAzEQhYMoWGp_gT4s-Lw1900epV7aUthCq68hu5uF1JrUJAv23xtpdRiYw3DODHwA3CE4RQjKh-V6Xm_r9ymGGE0JlBQRdAFGGDFeEgrJ5Z8mAl2DSYw7mItDxjkdgeXCfexMKtfBumS6YuGKjU1DsUlhaNMQ8kq7rnjyh6zWfn-Mdm9b74rc9bftTLEcXJusd_EGXPV6H83kPMfg7eV5O5uXq_p1MXtclS2WMpUV0dBQ0WHawkpzzCvRk6bnTS-06DvJiWiMrjrZ6E5qxDSUpGLQCGaM5oiSMbg_3T0E_zWYmNTOD8HllwozjiXDHMLsoidXG3yMwfTqEOynDkeFoPoFp87g1C84dQaXY7enmDXG_EcklawSkvwAkotp4A</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Wehmeier, Nadine</creator><creator>Kiefer, Fabian</creator><creator>Brendemuhl, Till</creator><creator>Mettner, Larissa</creator><creator>Wolter, Sascha J.</creator><creator>Haase, Felix</creator><creator>Peibst, Robby</creator><creator>Holthausen, Michael</creator><creator>Mispelkamp, Dominik</creator><creator>Mader, Christoph</creator><creator>Daeschlein, Christian</creator><creator>Wunnicke, Odo</creator><creator>Kajari-Schroder, Sarah</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5661-9713</orcidid><orcidid>https://orcid.org/0000-0002-2501-0964</orcidid><orcidid>https://orcid.org/0000-0001-8769-9392</orcidid></search><sort><creationdate>20210901</creationdate><title>Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions</title><author>Wehmeier, Nadine ; Kiefer, Fabian ; Brendemuhl, Till ; Mettner, Larissa ; Wolter, Sascha J. ; Haase, Felix ; Peibst, Robby ; Holthausen, Michael ; Mispelkamp, Dominik ; Mader, Christoph ; Daeschlein, Christian ; Wunnicke, Odo ; Kajari-Schroder, Sarah</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-73a0e48d24c07a62678f3bf6bf8a8fd9638bea7d9bad9a15a093750e85eea6143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Amorphous silicon</topic><topic>Annealing</topic><topic>Emitters</topic><topic>Ink jet printing</topic><topic>Inkjet printing</topic><topic>interdigitated back contact (IBC) structure</topic><topic>Junctions</topic><topic>liquid silicon (LiSi) ink</topic><topic>Oligomers</topic><topic>passivating contacts</topic><topic>Photovoltaic cells</topic><topic>Polysilicon</topic><topic>Silicon</topic><topic>Silicon oxides</topic><topic>silicon solar cells</topic><topic>Solar cells</topic><topic>Thickness measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wehmeier, Nadine</creatorcontrib><creatorcontrib>Kiefer, Fabian</creatorcontrib><creatorcontrib>Brendemuhl, Till</creatorcontrib><creatorcontrib>Mettner, Larissa</creatorcontrib><creatorcontrib>Wolter, Sascha J.</creatorcontrib><creatorcontrib>Haase, Felix</creatorcontrib><creatorcontrib>Peibst, Robby</creatorcontrib><creatorcontrib>Holthausen, Michael</creatorcontrib><creatorcontrib>Mispelkamp, Dominik</creatorcontrib><creatorcontrib>Mader, Christoph</creatorcontrib><creatorcontrib>Daeschlein, Christian</creatorcontrib><creatorcontrib>Wunnicke, Odo</creatorcontrib><creatorcontrib>Kajari-Schroder, Sarah</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wehmeier, Nadine</au><au>Kiefer, Fabian</au><au>Brendemuhl, Till</au><au>Mettner, Larissa</au><au>Wolter, Sascha J.</au><au>Haase, Felix</au><au>Peibst, Robby</au><au>Holthausen, Michael</au><au>Mispelkamp, Dominik</au><au>Mader, Christoph</au><au>Daeschlein, Christian</au><au>Wunnicke, Odo</au><au>Kajari-Schroder, Sarah</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions</atitle><jtitle>IEEE journal of photovoltaics</jtitle><stitle>JPHOTOV</stitle><date>2021-09-01</date><risdate>2021</risdate><volume>11</volume><issue>5</issue><spage>1149</spage><epage>1157</epage><pages>1149-1157</pages><issn>2156-3381</issn><eissn>2156-3403</eissn><coden>IJPEG8</coden><abstract>We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm 2 are achieved for n + -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO 2 solar cell processing. 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| subjects | Amorphous silicon Annealing Emitters Ink jet printing Inkjet printing interdigitated back contact (IBC) structure Junctions liquid silicon (LiSi) ink Oligomers passivating contacts Photovoltaic cells Polysilicon Silicon Silicon oxides silicon solar cells Solar cells Thickness measurement |
| title | Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions |
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