Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure
We have characterized a GaInP/GaAs HBT structure fabricated by MOCVD using SPS and CER, including the dependance of the CER signals on polarization to obtain the degree of ordering in the emitter. From the observed FKOs we have evaluated F coll and F emitter .The related doping levels were determine...
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| creator | Malikova, L. Mishori, B. Mourokh, L. Munoz, M. Pollak, F.H. Cooke, P. Armour, E. Sun, S. Silver, J. |
| description | We have characterized a GaInP/GaAs HBT structure fabricated by MOCVD using SPS and CER, including the dependance of the CER signals on polarization to obtain the degree of ordering in the emitter. From the observed FKOs we have evaluated F coll and F emitter .The related doping levels were determined based on a SCPCE calculation (including the photovoltaic effect). There is good agreement between the calculated and nominal doping values for both emitter and collector regions. In addition, we estimated electrodhole coherence lengths in these portions. The ordering parameter η was deduced from both ΔE EBS and ΔE BGR . The correspondence of η between these determinations is an indication that the emitter is lattice matched to the GaAs. The properties of the base have been evaluated by means of SPS. A comparison of the SPS lineshape with a SCPCE calculation has enabled us to estimate 190 |
| doi_str_mv | 10.1109/ISCS.2000.947122 |
| format | Conference Proceeding |
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From the observed FKOs we have evaluated F coll and F emitter .The related doping levels were determined based on a SCPCE calculation (including the photovoltaic effect). There is good agreement between the calculated and nominal doping values for both emitter and collector regions. In addition, we estimated electrodhole coherence lengths in these portions. The ordering parameter η was deduced from both ΔE EBS and ΔE BGR . The correspondence of η between these determinations is an indication that the emitter is lattice matched to the GaAs. The properties of the base have been evaluated by means of SPS. A comparison of the SPS lineshape with a SCPCE calculation has enabled us to estimate 190<β<290. This value is higher than experimentally determined number, an effect that may be due to interface roughness.The large number of FKOs from both the collector and emitter are an indication of the high quality of the GaAs and GaInP materials. This experiment demonstrates that the combination of CER (or photoreflectance) and SPS can be used to nondestructively evaluate important parameters of the collector, emitter, and base of GaInP/GaAs HBTs.</description><identifier>ISBN: 0780362586</identifier><identifier>ISBN: 9780780362581</identifier><identifier>DOI: 10.1109/ISCS.2000.947122</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Chemical vapor deposition ; Etching ; Gallium arsenide ; Heterojunction bipolar transistors ; Optical polarization ; Photonic band gap ; Spectroscopy</subject><ispartof>2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. 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Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)</title><addtitle>ISCS</addtitle><description>We have characterized a GaInP/GaAs HBT structure fabricated by MOCVD using SPS and CER, including the dependance of the CER signals on polarization to obtain the degree of ordering in the emitter. From the observed FKOs we have evaluated F coll and F emitter .The related doping levels were determined based on a SCPCE calculation (including the photovoltaic effect). There is good agreement between the calculated and nominal doping values for both emitter and collector regions. In addition, we estimated electrodhole coherence lengths in these portions. The ordering parameter η was deduced from both ΔE EBS and ΔE BGR . The correspondence of η between these determinations is an indication that the emitter is lattice matched to the GaAs. The properties of the base have been evaluated by means of SPS. A comparison of the SPS lineshape with a SCPCE calculation has enabled us to estimate 190<β<290. This value is higher than experimentally determined number, an effect that may be due to interface roughness.The large number of FKOs from both the collector and emitter are an indication of the high quality of the GaAs and GaInP materials. This experiment demonstrates that the combination of CER (or photoreflectance) and SPS can be used to nondestructively evaluate important parameters of the collector, emitter, and base of GaInP/GaAs HBTs.</description><subject>Absorption</subject><subject>Chemical vapor deposition</subject><subject>Etching</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Optical polarization</subject><subject>Photonic band gap</subject><subject>Spectroscopy</subject><isbn>0780362586</isbn><isbn>9780780362581</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNot0M9KAzEQBvCACGrtXTzlBdrmz26SHkvRWigoVM9lNjuxKetmSbJCfQvf2G3rYZgPfsx3GEIeOJtyzuaz9Xa5nQrG2HReaC7EFblj2jCpRGnUDRmndBiQFWWhlbklv9s-OrBIu33I4Ts0GT6Rpg5tjiHZ0B0ptDW1oc1gc4MpUWzOGNGdArTDsd1DHBij_4HsQ0uDo0BXsG7fZitYJLrHAcOhb-2ZK9-FBiLNEdrkUw6Rphx7m_uI9-TaQZNw_L9H5OP56X35Mtm8rtbLxWbiuRZ5ok0FttascqJGnNcKhjGoQGlZKFdywyuQzvKyltoCgNQgUBbGOFVgCXJEHi-9HhF3XfRfEI-7y9PkHzn7aKg</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Malikova, L.</creator><creator>Mishori, B.</creator><creator>Mourokh, L.</creator><creator>Munoz, M.</creator><creator>Pollak, F.H.</creator><creator>Cooke, P.</creator><creator>Armour, E.</creator><creator>Sun, S.</creator><creator>Silver, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure</title><author>Malikova, L. ; Mishori, B. ; Mourokh, L. ; Munoz, M. ; Pollak, F.H. ; Cooke, P. ; Armour, E. ; Sun, S. ; Silver, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-78bacd70bf2dee9d6a9d68e6a67346f5181ba3fc15d37caaa37a2e3488f64e5a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Absorption</topic><topic>Chemical vapor deposition</topic><topic>Etching</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Optical polarization</topic><topic>Photonic band gap</topic><topic>Spectroscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Malikova, L.</creatorcontrib><creatorcontrib>Mishori, B.</creatorcontrib><creatorcontrib>Mourokh, L.</creatorcontrib><creatorcontrib>Munoz, M.</creatorcontrib><creatorcontrib>Pollak, F.H.</creatorcontrib><creatorcontrib>Cooke, P.</creatorcontrib><creatorcontrib>Armour, E.</creatorcontrib><creatorcontrib>Sun, S.</creatorcontrib><creatorcontrib>Silver, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Malikova, L.</au><au>Mishori, B.</au><au>Mourokh, L.</au><au>Munoz, M.</au><au>Pollak, F.H.</au><au>Cooke, P.</au><au>Armour, E.</au><au>Sun, S.</au><au>Silver, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure</atitle><btitle>2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)</btitle><stitle>ISCS</stitle><date>2000</date><risdate>2000</risdate><spage>19</spage><epage>24</epage><pages>19-24</pages><isbn>0780362586</isbn><isbn>9780780362581</isbn><abstract>We have characterized a GaInP/GaAs HBT structure fabricated by MOCVD using SPS and CER, including the dependance of the CER signals on polarization to obtain the degree of ordering in the emitter. From the observed FKOs we have evaluated F coll and F emitter .The related doping levels were determined based on a SCPCE calculation (including the photovoltaic effect). There is good agreement between the calculated and nominal doping values for both emitter and collector regions. In addition, we estimated electrodhole coherence lengths in these portions. The ordering parameter η was deduced from both ΔE EBS and ΔE BGR . The correspondence of η between these determinations is an indication that the emitter is lattice matched to the GaAs. The properties of the base have been evaluated by means of SPS. A comparison of the SPS lineshape with a SCPCE calculation has enabled us to estimate 190<β<290. This value is higher than experimentally determined number, an effect that may be due to interface roughness.The large number of FKOs from both the collector and emitter are an indication of the high quality of the GaAs and GaInP materials. This experiment demonstrates that the combination of CER (or photoreflectance) and SPS can be used to nondestructively evaluate important parameters of the collector, emitter, and base of GaInP/GaAs HBTs.</abstract><pub>IEEE</pub><doi>10.1109/ISCS.2000.947122</doi><tpages>6</tpages></addata></record> |
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| identifier | ISBN: 0780362586 |
| ispartof | 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498), 2000, p.19-24 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Chemical vapor deposition Etching Gallium arsenide Heterojunction bipolar transistors Optical polarization Photonic band gap Spectroscopy |
| title | Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure |
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