Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory

A plasma-based undoped-HfO 2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O 2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( \text{P}_{\text {r}} ) up to 2P _{\text...

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