Electrical Tree Characteristics of Epoxy Resin/Aln Nanocomposites in LN2 With Repetitive Nanosecond Pulse Voltage
Under the action of nanosecond pulse voltage, the insulation material is prone to partial discharge, which induces the generation of electrical trees and insulation failure. The epoxy resin/aluminum nitride (AlN) nanocomposites are developed to suppress the development of electrical treeing for cryo...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 2021-11, Vol.31 (8), p.1-5 |
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| container_title | IEEE transactions on applied superconductivity |
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| creator | Zheng, Jingquan Shen, Yanyang Li, Jie Xing, Yunqi |
| description | Under the action of nanosecond pulse voltage, the insulation material is prone to partial discharge, which induces the generation of electrical trees and insulation failure. The epoxy resin/aluminum nitride (AlN) nanocomposites are developed to suppress the development of electrical treeing for cryogenic insulation of high-temperature superconducting power equipment. The effects of the content of aluminum nitride material on the relative permittivity and dielectric loss of composites were studied, as well as the growth characteristics of electrical treeing at liquid nitrogen temperature. The findings reveal that the samples with the AlN content of 3 wt% have the highest relative permittivity, rising by 15%, but nanoparticle doping has no significant effect on the dielectric loss of composites. Furthermore, the right amount of AlN nanoparticle doping will improve the electrical treeing resistance of epoxy resin and the insulation properties of composites. |
| doi_str_mv | 10.1109/TASC.2021.3091088 |
| format | Article |
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The epoxy resin/aluminum nitride (AlN) nanocomposites are developed to suppress the development of electrical treeing for cryogenic insulation of high-temperature superconducting power equipment. The effects of the content of aluminum nitride material on the relative permittivity and dielectric loss of composites were studied, as well as the growth characteristics of electrical treeing at liquid nitrogen temperature. The findings reveal that the samples with the AlN content of 3 wt% have the highest relative permittivity, rising by 15%, but nanoparticle doping has no significant effect on the dielectric loss of composites. Furthermore, the right amount of AlN nanoparticle doping will improve the electrical treeing resistance of epoxy resin and the insulation properties of composites.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2021.3091088</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum ; Aluminum nitride ; Cryogenic temperature ; Dielectric loss ; Dielectric properties ; Doping ; Electric potential ; electrical tree ; epoxy resin ; Epoxy resins ; High temperature ; III-V semiconductor materials ; Insulation ; Liquid nitrogen ; Nanocomposites ; Nanoparticles ; nanosecond pulse voltage ; Nanosecond pulses ; Permittivity ; Treeing ; Voltage</subject><ispartof>IEEE transactions on applied superconductivity, 2021-11, Vol.31 (8), p.1-5</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4000-2399 ; 0000-0002-5021-4133</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9462493$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27907,27908,54741</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9462493$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zheng, Jingquan</creatorcontrib><creatorcontrib>Shen, Yanyang</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Xing, Yunqi</creatorcontrib><title>Electrical Tree Characteristics of Epoxy Resin/Aln Nanocomposites in LN2 With Repetitive Nanosecond Pulse Voltage</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>Under the action of nanosecond pulse voltage, the insulation material is prone to partial discharge, which induces the generation of electrical trees and insulation failure. The epoxy resin/aluminum nitride (AlN) nanocomposites are developed to suppress the development of electrical treeing for cryogenic insulation of high-temperature superconducting power equipment. The effects of the content of aluminum nitride material on the relative permittivity and dielectric loss of composites were studied, as well as the growth characteristics of electrical treeing at liquid nitrogen temperature. The findings reveal that the samples with the AlN content of 3 wt% have the highest relative permittivity, rising by 15%, but nanoparticle doping has no significant effect on the dielectric loss of composites. Furthermore, the right amount of AlN nanoparticle doping will improve the electrical treeing resistance of epoxy resin and the insulation properties of composites.</description><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Cryogenic temperature</subject><subject>Dielectric loss</subject><subject>Dielectric properties</subject><subject>Doping</subject><subject>Electric potential</subject><subject>electrical tree</subject><subject>epoxy resin</subject><subject>Epoxy resins</subject><subject>High temperature</subject><subject>III-V semiconductor materials</subject><subject>Insulation</subject><subject>Liquid nitrogen</subject><subject>Nanocomposites</subject><subject>Nanoparticles</subject><subject>nanosecond pulse voltage</subject><subject>Nanosecond pulses</subject><subject>Permittivity</subject><subject>Treeing</subject><subject>Voltage</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjV1LwzAUhoMoOKc_QLwJeN0tH41NLkeZHzCm6NTLkqanLqNruiQT9-8NTs7FOS_vw3MQuqZkQilR09XsrZwwwuiEE0WJlCdoRIWQGRNUnKabCJpJxvg5ughhQwjNZS5GaDfvwERvje7wygPgcq29NhG8DdGagF2L54P7OeBXCLafzroeL3XvjNsOLtgIAdseL5YMf9q4TtAA0Ub7DX9UAOP6Br_suwD4w3VRf8ElOmt1ylf_e4ze7-er8jFbPD88lbNFZinnMasbzYuWEMmJAMKhbrWoG2loU3CSK8ZFkSbP80LVjEthqGgaArpRqSa14GN0e_QO3u32EGK1cXvfp5cVE4JRoZIkUTdHygJANXi71f5QqfyO5YrzX_bgZVQ</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Zheng, Jingquan</creator><creator>Shen, Yanyang</creator><creator>Li, Jie</creator><creator>Xing, Yunqi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4000-2399</orcidid><orcidid>https://orcid.org/0000-0002-5021-4133</orcidid></search><sort><creationdate>20211101</creationdate><title>Electrical Tree Characteristics of Epoxy Resin/Aln Nanocomposites in LN2 With Repetitive Nanosecond Pulse Voltage</title><author>Zheng, Jingquan ; Shen, Yanyang ; Li, Jie ; Xing, Yunqi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-bda37f008305e03ebfa5bd8c1d73049235757544479b2385c15dd0ead93040b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Cryogenic temperature</topic><topic>Dielectric loss</topic><topic>Dielectric properties</topic><topic>Doping</topic><topic>Electric potential</topic><topic>electrical tree</topic><topic>epoxy resin</topic><topic>Epoxy resins</topic><topic>High temperature</topic><topic>III-V semiconductor materials</topic><topic>Insulation</topic><topic>Liquid nitrogen</topic><topic>Nanocomposites</topic><topic>Nanoparticles</topic><topic>nanosecond pulse voltage</topic><topic>Nanosecond pulses</topic><topic>Permittivity</topic><topic>Treeing</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zheng, Jingquan</creatorcontrib><creatorcontrib>Shen, Yanyang</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Xing, Yunqi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zheng, Jingquan</au><au>Shen, Yanyang</au><au>Li, Jie</au><au>Xing, Yunqi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical Tree Characteristics of Epoxy Resin/Aln Nanocomposites in LN2 With Repetitive Nanosecond Pulse Voltage</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2021-11-01</date><risdate>2021</risdate><volume>31</volume><issue>8</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>Under the action of nanosecond pulse voltage, the insulation material is prone to partial discharge, which induces the generation of electrical trees and insulation failure. The epoxy resin/aluminum nitride (AlN) nanocomposites are developed to suppress the development of electrical treeing for cryogenic insulation of high-temperature superconducting power equipment. The effects of the content of aluminum nitride material on the relative permittivity and dielectric loss of composites were studied, as well as the growth characteristics of electrical treeing at liquid nitrogen temperature. The findings reveal that the samples with the AlN content of 3 wt% have the highest relative permittivity, rising by 15%, but nanoparticle doping has no significant effect on the dielectric loss of composites. 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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Aluminum nitride Cryogenic temperature Dielectric loss Dielectric properties Doping Electric potential electrical tree epoxy resin Epoxy resins High temperature III-V semiconductor materials Insulation Liquid nitrogen Nanocomposites Nanoparticles nanosecond pulse voltage Nanosecond pulses Permittivity Treeing Voltage |
| title | Electrical Tree Characteristics of Epoxy Resin/Aln Nanocomposites in LN2 With Repetitive Nanosecond Pulse Voltage |
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