Interface Optimization of Passivated Er2O3/Al2O3/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

The effect of atomic-layer-deposition (ALD)-derived Al 2 O 3 passivation layer on the interface quality of Er 2 O 3 /Al 2 O 3 /InP laminated stacks and the improvement of electrical performance has been investigated systematically. The chemical bonding states measured by high-resolution X-ray photoe...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-06, Vol.68 (6), p.2899-2905
Hauptverfasser:	Qiao, Lesheng, He, Gang, Hao, Lin, Lu, Jinyu, Gao, Qian, Zhang, Miao, Fang, Zebo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Al₂O₃ passivation layer Atomic layer epitaxy Capacitors Chemical bonds Diffusion layers Electrical properties Erbium Erbium oxide Er₂O₃ gate dielectrics III-V semiconductor materials Indium phosphide indium phosphide (InP) interface reaction interface state density Leakage current Leakage currents Logic gates Optimization Passivation Passivity Photoelectrons Resistance Substrate inhibition Substrates Thickness X ray photoelectron spectroscopy
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