Surface and bulk properties of GaAs [001] treated by Mg layers
Photoelectron spectroscopy was used to investigate the interactions which occur when Mg is deposited onto a GaAs [001] surface. The Mg, Ga and As core lines were deconvoluted into components whose angle dependence and intensity variation with overlayer thickness was used to interpret the reactions a...
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| creator | Feng, P.X. Leckery, R.C.G. Riley, J.D. Pigram, P.J. Hollering, M. Ley, L. |
| description | Photoelectron spectroscopy was used to investigate the interactions which occur when Mg is deposited onto a GaAs [001] surface. The Mg, Ga and As core lines were deconvoluted into components whose angle dependence and intensity variation with overlayer thickness was used to interpret the reactions and morphology. The deposition of Mg causes the appearance of new chemically shifted components in Ga and As. This is interpreted as showing that the Mg initially diffuses into the GaAs and replaces the Ga which diffuses towards the surface, Further Mg deposition causes more in-diffusion but also creates a Mg overlayer. Annealing the sample to 500/spl deg/C causes the overlayer to desorb together with the disappearance of most of the Mg in the lattice from the sampled layer. Some Mg-As however remains. |
| doi_str_mv | 10.1109/SIM.2000.939240 |
| format | Conference Proceeding |
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The Mg, Ga and As core lines were deconvoluted into components whose angle dependence and intensity variation with overlayer thickness was used to interpret the reactions and morphology. The deposition of Mg causes the appearance of new chemically shifted components in Ga and As. This is interpreted as showing that the Mg initially diffuses into the GaAs and replaces the Ga which diffuses towards the surface, Further Mg deposition causes more in-diffusion but also creates a Mg overlayer. Annealing the sample to 500/spl deg/C causes the overlayer to desorb together with the disappearance of most of the Mg in the lattice from the sampled layer. Some Mg-As however remains.</description><identifier>ISBN: 9780780358140</identifier><identifier>ISBN: 0780358147</identifier><identifier>DOI: 10.1109/SIM.2000.939240</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Chemicals ; Gallium arsenide ; Lattices ; Photoelectricity ; Physics ; Spectroscopy ; Substrates ; Surface morphology ; Surface treatment</subject><ispartof>2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. 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Some Mg-As however remains.</description><subject>Annealing</subject><subject>Chemicals</subject><subject>Gallium arsenide</subject><subject>Lattices</subject><subject>Photoelectricity</subject><subject>Physics</subject><subject>Spectroscopy</subject><subject>Substrates</subject><subject>Surface morphology</subject><subject>Surface treatment</subject><isbn>9780780358140</isbn><isbn>0780358147</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj09Lw0AUxBdEUGrOgqf9Aolv_2WzF6EUrYUWD9WTSHm7eSvRaMNuesi3N1BhYA4zDL9h7FZAJQS4-_1mV0kAqJxyUsMFK5xtYJYyjdBwxYqcv-YctNHWwjV72J9SxEAcf1vuT_03H9JxoDR2lPkx8jUuM38HEB98TIQjza2J7z55jxOlfMMuI_aZin9fsLenx9fVc7l9WW9Wy23ZCavHEmNrwMNMgTUCOQdGB0WuljZGG1BaH0JsQ4vUGAy6lnUwfmZEITw0Vi3Y3Xm3I6LDkLofTNPhfFL9AU0ZReY</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Feng, P.X.</creator><creator>Leckery, R.C.G.</creator><creator>Riley, J.D.</creator><creator>Pigram, P.J.</creator><creator>Hollering, M.</creator><creator>Ley, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Surface and bulk properties of GaAs [001] treated by Mg layers</title><author>Feng, P.X. ; Leckery, R.C.G. ; Riley, J.D. ; Pigram, P.J. ; Hollering, M. ; Ley, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-afd50b0035a6a0e99054c3e9627ff7ca27bccfdcdae85ac4626c5b454a11b0873</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Annealing</topic><topic>Chemicals</topic><topic>Gallium arsenide</topic><topic>Lattices</topic><topic>Photoelectricity</topic><topic>Physics</topic><topic>Spectroscopy</topic><topic>Substrates</topic><topic>Surface morphology</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Feng, P.X.</creatorcontrib><creatorcontrib>Leckery, R.C.G.</creatorcontrib><creatorcontrib>Riley, J.D.</creatorcontrib><creatorcontrib>Pigram, P.J.</creatorcontrib><creatorcontrib>Hollering, M.</creatorcontrib><creatorcontrib>Ley, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Feng, P.X.</au><au>Leckery, R.C.G.</au><au>Riley, J.D.</au><au>Pigram, P.J.</au><au>Hollering, M.</au><au>Ley, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Surface and bulk properties of GaAs [001] treated by Mg layers</atitle><btitle>2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)</btitle><stitle>SIM</stitle><date>2000</date><risdate>2000</risdate><spage>264</spage><epage>267</epage><pages>264-267</pages><isbn>9780780358140</isbn><isbn>0780358147</isbn><abstract>Photoelectron spectroscopy was used to investigate the interactions which occur when Mg is deposited onto a GaAs [001] surface. The Mg, Ga and As core lines were deconvoluted into components whose angle dependence and intensity variation with overlayer thickness was used to interpret the reactions and morphology. The deposition of Mg causes the appearance of new chemically shifted components in Ga and As. This is interpreted as showing that the Mg initially diffuses into the GaAs and replaces the Ga which diffuses towards the surface, Further Mg deposition causes more in-diffusion but also creates a Mg overlayer. Annealing the sample to 500/spl deg/C causes the overlayer to desorb together with the disappearance of most of the Mg in the lattice from the sampled layer. Some Mg-As however remains.</abstract><pub>IEEE</pub><doi>10.1109/SIM.2000.939240</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Chemicals Gallium arsenide Lattices Photoelectricity Physics Spectroscopy Substrates Surface morphology Surface treatment |
| title | Surface and bulk properties of GaAs [001] treated by Mg layers |
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