Application of charged insulator defects for the realisation of low-dimensional structures in silicon

Low-dimensional structures such as quantum wires and dots are a key feature of upcoming nanoscale semiconductor devices. As yet, such structures can only be realised using expensive and sophisticated lithographic methods. In contrast, we aim at fabricating quantum structures in silicon using a very...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, J.E., Gauja, E., Vogl, B., Puzzer, T., Lumpkin, N.E., Dzurak, A.S., Ckark, R.G., Aberle, A.G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic force microscopy Cable insulation Circuits Dielectrics and electrical insulation Metal-insulator structures Nanoscale devices Quantum computing Quantum dots Silicon Wires
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