Application of charged insulator defects for the realisation of low-dimensional structures in silicon
Low-dimensional structures such as quantum wires and dots are a key feature of upcoming nanoscale semiconductor devices. As yet, such structures can only be realised using expensive and sophisticated lithographic methods. In contrast, we aim at fabricating quantum structures in silicon using a very...
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| creator | Wu, J.E. Gauja, E. Vogl, B. Puzzer, T. Lumpkin, N.E. Dzurak, A.S. Ckark, R.G. Aberle, A.G. |
| description | Low-dimensional structures such as quantum wires and dots are a key feature of upcoming nanoscale semiconductor devices. As yet, such structures can only be realised using expensive and sophisticated lithographic methods. In contrast, we aim at fabricating quantum structures in silicon using a very simple and cost-effective approach. The structures are based on charged insulator defects within a silicon oxide/silicon nitride insulator stack on a p-type silicon wafer. By means of an atomic-resolution microscope the insulator defects can controllably be charged or discharged, offering the potential to realise inversion-layer quantum dots and wires in silicon. |
| doi_str_mv | 10.1109/SIM.2000.939229 |
| format | Conference Proceeding |
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By means of an atomic-resolution microscope the insulator defects can controllably be charged or discharged, offering the potential to realise inversion-layer quantum dots and wires in silicon.</description><subject>Atomic force microscopy</subject><subject>Cable insulation</subject><subject>Circuits</subject><subject>Dielectrics and electrical insulation</subject><subject>Metal-insulator structures</subject><subject>Nanoscale devices</subject><subject>Quantum computing</subject><subject>Quantum dots</subject><subject>Silicon</subject><subject>Wires</subject><isbn>9780780358140</isbn><isbn>0780358147</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kFtLxDAQhQMiKGufBZ_yB7pOLm2Tx2XxsrDig_q8pOnEjWTbkqSI_97AijAwh3OYD84QcstgzRjo-7fdy5oDwFoLzbm-IJXuFJQRjWISrkiV0lfJQTay6-Ca4Gaeg7cm-2mkk6P2aOInDtSPaQkmT5EO6NDmRF3R-Yg0ogk-_R-E6bse_AnHVAwTaMpxsXmJmAqDJl_g03hDLp0JCau_vSIfjw_v2-d6__q02272tWedzDXnxgkLoFveWSPbBrlBqS00pu8ZOqGEGhBbXsoxIxhXrFODs0w2qkctxIrcnbkeEQ9z9CcTfw7nX4hfnghWBw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Wu, J.E.</creator><creator>Gauja, E.</creator><creator>Vogl, B.</creator><creator>Puzzer, T.</creator><creator>Lumpkin, N.E.</creator><creator>Dzurak, A.S.</creator><creator>Ckark, R.G.</creator><creator>Aberle, A.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Application of charged insulator defects for the realisation of low-dimensional structures in silicon</title><author>Wu, J.E. ; Gauja, E. ; Vogl, B. ; Puzzer, T. ; Lumpkin, N.E. ; Dzurak, A.S. ; Ckark, R.G. ; Aberle, A.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-22af3c009627ca465e2ae49c05abb1ef3838dee623921a3128178dfc1458be933</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Atomic force microscopy</topic><topic>Cable insulation</topic><topic>Circuits</topic><topic>Dielectrics and electrical insulation</topic><topic>Metal-insulator structures</topic><topic>Nanoscale devices</topic><topic>Quantum computing</topic><topic>Quantum dots</topic><topic>Silicon</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Wu, J.E.</creatorcontrib><creatorcontrib>Gauja, E.</creatorcontrib><creatorcontrib>Vogl, B.</creatorcontrib><creatorcontrib>Puzzer, T.</creatorcontrib><creatorcontrib>Lumpkin, N.E.</creatorcontrib><creatorcontrib>Dzurak, A.S.</creatorcontrib><creatorcontrib>Ckark, R.G.</creatorcontrib><creatorcontrib>Aberle, A.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wu, J.E.</au><au>Gauja, E.</au><au>Vogl, B.</au><au>Puzzer, T.</au><au>Lumpkin, N.E.</au><au>Dzurak, A.S.</au><au>Ckark, R.G.</au><au>Aberle, A.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Application of charged insulator defects for the realisation of low-dimensional structures in silicon</atitle><btitle>2000 International Semiconducting and Insulating Materials Conference. 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| identifier | ISBN: 9780780358140 |
| ispartof | 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000, p.213-216 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic force microscopy Cable insulation Circuits Dielectrics and electrical insulation Metal-insulator structures Nanoscale devices Quantum computing Quantum dots Silicon Wires |
| title | Application of charged insulator defects for the realisation of low-dimensional structures in silicon |
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