Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He Ion Irradiation

Silicon carbide (SiC) detectors have great potential in nuclear fusion diagnosis and intense irradiation field measurement due to their outstanding irradiation resistance, high charge collection efficiency (CCE), and fast pulse response time. However, the irradiation resistance and the performance d...

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Veröffentlicht in:	IEEE transactions on nuclear science 2021-05, Vol.68 (5), p.1169-1174
Hauptverfasser:	Gao, Run-Long, Liu, Lin-Yue, Ruan, Jin-Lu, Jin, Peng, Ouyang, Xiao, Zhou, Lei-Dang, Li, Yang, Zhang, Si-Long, Zhao, Kuo, Ouyang, Xiao-Ping
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge efficiency Charged particles Current voltage characteristics Dark current Degradation Detectors Energy resolution He ion irradiation Ion irradiation Ions Irradiation Nuclear fusion P-i-n junctions Performance degradation Radiation Radiation counters Radiation effects Reliability analysis Response time Sensors Silicon carbide silicon carbide (SiC) detector
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