Novel Temperature-Compensated, Silicon SAW Design for Filter Integration
Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high- {Q} , good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of r...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2021-06, Vol.31 (6), p.674-677 |
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creator | Ruby, R. Gilbert, S. Lee, S. K. Nilchi, J. Kim, S. W. |
description | Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high- {Q} , good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs). |
doi_str_mv | 10.1109/LMWC.2021.3068624 |
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This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2021.3068624</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Acoustics ; Apodization ; Cost control ; Frequencies ; front-end radios ; hybrid substrate ; integrated filters ; Lithium tantalates ; Microwave filters ; Power filters ; Resonator filters ; Resonators ; Silicon ; Silicon substrates ; SiSAW ; Substrates ; surface acoustic device ; Surface acoustic waves ; temperature compensated (TC)-surface acoustic wave (TC-SAW) ; Temperature compensation</subject><ispartof>IEEE microwave and wireless components letters, 2021-06, Vol.31 (6), p.674-677</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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W.</creatorcontrib><title>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high-<inline-formula> <tex-math notation="LaTeX">{Q} </tex-math></inline-formula>, good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</description><subject>Acoustics</subject><subject>Apodization</subject><subject>Cost control</subject><subject>Frequencies</subject><subject>front-end radios</subject><subject>hybrid substrate</subject><subject>integrated filters</subject><subject>Lithium tantalates</subject><subject>Microwave filters</subject><subject>Power filters</subject><subject>Resonator filters</subject><subject>Resonators</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>SiSAW</subject><subject>Substrates</subject><subject>surface acoustic device</subject><subject>Surface acoustic waves</subject><subject>temperature compensated (TC)-surface acoustic wave (TC-SAW)</subject><subject>Temperature compensation</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLw0AUhQdRsFZ_gLgJuDX13nkkmWWJ1haqLlrpcsjjpqSkmTqTCv57E1pc3bM437nwMXaPMEEE_bx836QTDhwnAqIk4vKCjVCpJMQ4kpdDFhiiAH3NbrzfAaBMJI7Y_MP-UBOsaX8gl3VHR2Fq-9z6rKPyKVjVTV3YNlhNN8EL-XrbBpV1waxuOnLBou1o22O1bW_ZVZU1nu7Od8y-Zq_rdB4uP98W6XQZFlyLLsxVLFHlkYpUXGqhsIyyXBRxURUJxbnWABI0lJhgpZAKnYhM8gygVJIqjWLMHk-7B2e_j-Q7s7NH1_YvDVeiX-Rcyb6Fp1bhrPeOKnNw9T5zvwbBDMLMIMwMwsxZWM88nJiaiP77WiQKAcUfe-NlcQ</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Ruby, R.</creator><creator>Gilbert, S.</creator><creator>Lee, S. K.</creator><creator>Nilchi, J.</creator><creator>Kim, S. W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0865-7176</orcidid></search><sort><creationdate>20210601</creationdate><title>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</title><author>Ruby, R. ; Gilbert, S. ; Lee, S. K. ; Nilchi, J. ; Kim, S. 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W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>31</volume><issue>6</issue><spage>674</spage><epage>677</epage><pages>674-677</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high-<inline-formula> <tex-math notation="LaTeX">{Q} </tex-math></inline-formula>, good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2021.3068624</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0865-7176</orcidid></addata></record> |
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subjects | Acoustics Apodization Cost control Frequencies front-end radios hybrid substrate integrated filters Lithium tantalates Microwave filters Power filters Resonator filters Resonators Silicon Silicon substrates SiSAW Substrates surface acoustic device Surface acoustic waves temperature compensated (TC)-surface acoustic wave (TC-SAW) Temperature compensation |
title | Novel Temperature-Compensated, Silicon SAW Design for Filter Integration |
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