Novel Temperature-Compensated, Silicon SAW Design for Filter Integration

Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high- {Q} , good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and wireless components letters 2021-06, Vol.31 (6), p.674-677
Hauptverfasser: Ruby, R., Gilbert, S., Lee, S. K., Nilchi, J., Kim, S. W.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 677
container_issue 6
container_start_page 674
container_title IEEE microwave and wireless components letters
container_volume 31
creator Ruby, R.
Gilbert, S.
Lee, S. K.
Nilchi, J.
Kim, S. W.
description Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high- {Q} , good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).
doi_str_mv 10.1109/LMWC.2021.3068624
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9385101</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9385101</ieee_id><sourcerecordid>2539352254</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-b57415b65657d9351d6ab3c7cfc8e7b99004090d181f51ec983a42a00d54ef913</originalsourceid><addsrcrecordid>eNo9kEtLw0AUhQdRsFZ_gLgJuDX13nkkmWWJ1haqLlrpcsjjpqSkmTqTCv57E1pc3bM437nwMXaPMEEE_bx836QTDhwnAqIk4vKCjVCpJMQ4kpdDFhiiAH3NbrzfAaBMJI7Y_MP-UBOsaX8gl3VHR2Fq-9z6rKPyKVjVTV3YNlhNN8EL-XrbBpV1waxuOnLBou1o22O1bW_ZVZU1nu7Od8y-Zq_rdB4uP98W6XQZFlyLLsxVLFHlkYpUXGqhsIyyXBRxURUJxbnWABI0lJhgpZAKnYhM8gygVJIqjWLMHk-7B2e_j-Q7s7NH1_YvDVeiX-Rcyb6Fp1bhrPeOKnNw9T5zvwbBDMLMIMwMwsxZWM88nJiaiP77WiQKAcUfe-NlcQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2539352254</pqid></control><display><type>article</type><title>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</title><source>IEEE Electronic Library (IEL)</source><creator>Ruby, R. ; Gilbert, S. ; Lee, S. K. ; Nilchi, J. ; Kim, S. W.</creator><creatorcontrib>Ruby, R. ; Gilbert, S. ; Lee, S. K. ; Nilchi, J. ; Kim, S. W.</creatorcontrib><description>Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;{Q} &lt;/tex-math&gt;&lt;/inline-formula&gt;, good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2021.3068624</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Acoustics ; Apodization ; Cost control ; Frequencies ; front-end radios ; hybrid substrate ; integrated filters ; Lithium tantalates ; Microwave filters ; Power filters ; Resonator filters ; Resonators ; Silicon ; Silicon substrates ; SiSAW ; Substrates ; surface acoustic device ; Surface acoustic waves ; temperature compensated (TC)-surface acoustic wave (TC-SAW) ; Temperature compensation</subject><ispartof>IEEE microwave and wireless components letters, 2021-06, Vol.31 (6), p.674-677</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-b57415b65657d9351d6ab3c7cfc8e7b99004090d181f51ec983a42a00d54ef913</citedby><cites>FETCH-LOGICAL-c293t-b57415b65657d9351d6ab3c7cfc8e7b99004090d181f51ec983a42a00d54ef913</cites><orcidid>0000-0002-0865-7176</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9385101$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9385101$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ruby, R.</creatorcontrib><creatorcontrib>Gilbert, S.</creatorcontrib><creatorcontrib>Lee, S. K.</creatorcontrib><creatorcontrib>Nilchi, J.</creatorcontrib><creatorcontrib>Kim, S. W.</creatorcontrib><title>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;{Q} &lt;/tex-math&gt;&lt;/inline-formula&gt;, good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</description><subject>Acoustics</subject><subject>Apodization</subject><subject>Cost control</subject><subject>Frequencies</subject><subject>front-end radios</subject><subject>hybrid substrate</subject><subject>integrated filters</subject><subject>Lithium tantalates</subject><subject>Microwave filters</subject><subject>Power filters</subject><subject>Resonator filters</subject><subject>Resonators</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>SiSAW</subject><subject>Substrates</subject><subject>surface acoustic device</subject><subject>Surface acoustic waves</subject><subject>temperature compensated (TC)-surface acoustic wave (TC-SAW)</subject><subject>Temperature compensation</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLw0AUhQdRsFZ_gLgJuDX13nkkmWWJ1haqLlrpcsjjpqSkmTqTCv57E1pc3bM437nwMXaPMEEE_bx836QTDhwnAqIk4vKCjVCpJMQ4kpdDFhiiAH3NbrzfAaBMJI7Y_MP-UBOsaX8gl3VHR2Fq-9z6rKPyKVjVTV3YNlhNN8EL-XrbBpV1waxuOnLBou1o22O1bW_ZVZU1nu7Od8y-Zq_rdB4uP98W6XQZFlyLLsxVLFHlkYpUXGqhsIyyXBRxURUJxbnWABI0lJhgpZAKnYhM8gygVJIqjWLMHk-7B2e_j-Q7s7NH1_YvDVeiX-Rcyb6Fp1bhrPeOKnNw9T5zvwbBDMLMIMwMwsxZWM88nJiaiP77WiQKAcUfe-NlcQ</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Ruby, R.</creator><creator>Gilbert, S.</creator><creator>Lee, S. K.</creator><creator>Nilchi, J.</creator><creator>Kim, S. W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0865-7176</orcidid></search><sort><creationdate>20210601</creationdate><title>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</title><author>Ruby, R. ; Gilbert, S. ; Lee, S. K. ; Nilchi, J. ; Kim, S. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-b57415b65657d9351d6ab3c7cfc8e7b99004090d181f51ec983a42a00d54ef913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Acoustics</topic><topic>Apodization</topic><topic>Cost control</topic><topic>Frequencies</topic><topic>front-end radios</topic><topic>hybrid substrate</topic><topic>integrated filters</topic><topic>Lithium tantalates</topic><topic>Microwave filters</topic><topic>Power filters</topic><topic>Resonator filters</topic><topic>Resonators</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>SiSAW</topic><topic>Substrates</topic><topic>surface acoustic device</topic><topic>Surface acoustic waves</topic><topic>temperature compensated (TC)-surface acoustic wave (TC-SAW)</topic><topic>Temperature compensation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruby, R.</creatorcontrib><creatorcontrib>Gilbert, S.</creatorcontrib><creatorcontrib>Lee, S. K.</creatorcontrib><creatorcontrib>Nilchi, J.</creatorcontrib><creatorcontrib>Kim, S. W.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ruby, R.</au><au>Gilbert, S.</au><au>Lee, S. K.</au><au>Nilchi, J.</au><au>Kim, S. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel Temperature-Compensated, Silicon SAW Design for Filter Integration</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>31</volume><issue>6</issue><spage>674</spage><epage>677</epage><pages>674-677</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>Today's phones have as many as 60 front-end radios covering multiple frequency bands. For each frequency band, acoustic filters offer high-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;{Q} &lt;/tex-math&gt;&lt;/inline-formula&gt;, good power handling, and linearity in a very small package. These properties are crucial when addressing the "explosion" in the number of radios and the filters needed by today's Smart Phones. Moving forward, filter integration will become essential for cost and size. A novel lithium tantalate (LT) bonded to silicon hybrid substrate silicon SAW (SiSAW) was developed that provides temperature compensation, good power handling properties, while mostly eliminating spurious modes created between the LT/Si interface. One of several advantages of this technique is that one can integrate as many filters as needed onto one die. This provides for cost savings as well as area savings while reproducing the inherent performance of high-quality temperature compensated (TC)-surface acoustic waves (TC-SAWs).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2021.3068624</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0865-7176</orcidid></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1531-1309
ispartof IEEE microwave and wireless components letters, 2021-06, Vol.31 (6), p.674-677
issn 1531-1309
2771-957X
1558-1764
2771-9588
language eng
recordid cdi_ieee_primary_9385101
source IEEE Electronic Library (IEL)
subjects Acoustics
Apodization
Cost control
Frequencies
front-end radios
hybrid substrate
integrated filters
Lithium tantalates
Microwave filters
Power filters
Resonator filters
Resonators
Silicon
Silicon substrates
SiSAW
Substrates
surface acoustic device
Surface acoustic waves
temperature compensated (TC)-surface acoustic wave (TC-SAW)
Temperature compensation
title Novel Temperature-Compensated, Silicon SAW Design for Filter Integration
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A14%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Novel%20Temperature-Compensated,%20Silicon%20SAW%20Design%20for%20Filter%20Integration&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Ruby,%20R.&rft.date=2021-06-01&rft.volume=31&rft.issue=6&rft.spage=674&rft.epage=677&rft.pages=674-677&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2021.3068624&rft_dat=%3Cproquest_RIE%3E2539352254%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2539352254&rft_id=info:pmid/&rft_ieee_id=9385101&rfr_iscdi=true