Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies be...

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Veröffentlicht in:	IEEE transactions on nuclear science 2021-05, Vol.68 (5), p.716-723
Hauptverfasser:	Soderstrom, Daniel, Luza, Lucas Matana, Kettunen, Heikki, Javanainen, Arto, Farabolini, Wilfrid, Gilardi, Antonio, Coronetti, Andrea, Poivey, Christian, Dilillo, Luigi
Format:	Artikel
Sprache:	eng
Schlagworte:	Clusters Computer Science Damage accumulation Dynamic random access memory Electron energy Electron radiation Electronics Embedded Systems Engineering Sciences Fluence Icy satellites Irradiation Jupiter Memory cells Micro and nanotechnologies Microelectronics Radiation Radiation effects SDRAM Single electrons Single Event Effects Single event upsets single-event upsets (SEUs) Space exploration Space missions stuck bits Total ionizing dose total ionizing dose (TID)
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