Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals
The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10^{9} to 10^{10} ~\Omega \cdot cm after annealing. With the increase of annea...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2021-04, Vol.68 (4), p.458-462 |
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| creator | Yu, Pengfei Shao, Tingquan Ma, Zhefan Gao, Pandeng Jing, Biru Liu, Wenfei Liu, Chongqi Chen, Yongyang Liu, Yuanpei Fang, Zhou Luan, Lijun |
| description | The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10^{9} to 10^{10} ~\Omega \cdot cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A 1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest ( \mu \tau ) e value had the best detector performance. |
| doi_str_mv | 10.1109/TNS.2021.3067726 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9382341</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9382341</ieee_id><sourcerecordid>2515743826</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-88b44990497e58a9e7ebda7f398e8fe2ae6cb8b483ca0e28e2166a08cbebbd443</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUvA89Ykm91NvEmtbaF-gOtRQjY7K1u2SU3SQ_-9KS2ehmGed2Z4ELqlZEIpkQ_12-eEEUYnOSmripVnaESLQmS0qMQ5GhFCRSa5lJfoKoR1anlBihH6Xtpu2IE1gF2HF_vWux-wuPag4wZsxM7i2QAm-t7oAX94twUfewgH_Blimjifzb1uAU_bV1vD49Liqd-HqIdwjS66VODmVMfo62VWTxfZ6n2-nD6tMsMkjZkQDU-vES4rKISWUEHT6qrLpQDRAdNQmiYxIjeaABPAaFlqIkwDTdNyno_R_XHv1rvfHYSo1m7nbTqpWJEM8FywMlHkSBnvQvDQqa3vN9rvFSXqIFElieogUZ0kpsjdMdIDwD8u07qc0_wP4t1uKw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2515743826</pqid></control><display><type>article</type><title>Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals</title><source>IEEE Electronic Library (IEL)</source><creator>Yu, Pengfei ; Shao, Tingquan ; Ma, Zhefan ; Gao, Pandeng ; Jing, Biru ; Liu, Wenfei ; Liu, Chongqi ; Chen, Yongyang ; Liu, Yuanpei ; Fang, Zhou ; Luan, Lijun</creator><creatorcontrib>Yu, Pengfei ; Shao, Tingquan ; Ma, Zhefan ; Gao, Pandeng ; Jing, Biru ; Liu, Wenfei ; Liu, Chongqi ; Chen, Yongyang ; Liu, Yuanpei ; Fang, Zhou ; Luan, Lijun</creatorcontrib><description><![CDATA[The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from <inline-formula> <tex-math notation="LaTeX">10^{9} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">10^{10} ~\Omega \cdot </tex-math></inline-formula>cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A 1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (<inline-formula> <tex-math notation="LaTeX">\mu \tau </tex-math></inline-formula>) e value had the best detector performance.]]></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2021.3067726</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Cadmium ; cadmium compounds ; Carrier density ; Conductivity ; Crystal surfaces ; Crystals ; current–voltage characteristics ; Detectors ; Electrical properties ; Electrical resistivity ; Energy resolution ; Hydrogen ; Manganese ; materials testing ; Mobility ; Raman spectroscopy ; semiconductor detectors ; Sensors ; Surface treatment ; Tellurides ; Temperature measurement</subject><ispartof>IEEE transactions on nuclear science, 2021-04, Vol.68 (4), p.458-462</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-88b44990497e58a9e7ebda7f398e8fe2ae6cb8b483ca0e28e2166a08cbebbd443</citedby><cites>FETCH-LOGICAL-c291t-88b44990497e58a9e7ebda7f398e8fe2ae6cb8b483ca0e28e2166a08cbebbd443</cites><orcidid>0000-0002-8361-7625 ; 0000-0002-2502-8574</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9382341$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9382341$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu, Pengfei</creatorcontrib><creatorcontrib>Shao, Tingquan</creatorcontrib><creatorcontrib>Ma, Zhefan</creatorcontrib><creatorcontrib>Gao, Pandeng</creatorcontrib><creatorcontrib>Jing, Biru</creatorcontrib><creatorcontrib>Liu, Wenfei</creatorcontrib><creatorcontrib>Liu, Chongqi</creatorcontrib><creatorcontrib>Chen, Yongyang</creatorcontrib><creatorcontrib>Liu, Yuanpei</creatorcontrib><creatorcontrib>Fang, Zhou</creatorcontrib><creatorcontrib>Luan, Lijun</creatorcontrib><title>Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description><![CDATA[The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from <inline-formula> <tex-math notation="LaTeX">10^{9} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">10^{10} ~\Omega \cdot </tex-math></inline-formula>cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A 1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (<inline-formula> <tex-math notation="LaTeX">\mu \tau </tex-math></inline-formula>) e value had the best detector performance.]]></description><subject>Annealing</subject><subject>Cadmium</subject><subject>cadmium compounds</subject><subject>Carrier density</subject><subject>Conductivity</subject><subject>Crystal surfaces</subject><subject>Crystals</subject><subject>current–voltage characteristics</subject><subject>Detectors</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Energy resolution</subject><subject>Hydrogen</subject><subject>Manganese</subject><subject>materials testing</subject><subject>Mobility</subject><subject>Raman spectroscopy</subject><subject>semiconductor detectors</subject><subject>Sensors</subject><subject>Surface treatment</subject><subject>Tellurides</subject><subject>Temperature measurement</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wUvA89Ykm91NvEmtbaF-gOtRQjY7K1u2SU3SQ_-9KS2ehmGed2Z4ELqlZEIpkQ_12-eEEUYnOSmripVnaESLQmS0qMQ5GhFCRSa5lJfoKoR1anlBihH6Xtpu2IE1gF2HF_vWux-wuPag4wZsxM7i2QAm-t7oAX94twUfewgH_Blimjifzb1uAU_bV1vD49Liqd-HqIdwjS66VODmVMfo62VWTxfZ6n2-nD6tMsMkjZkQDU-vES4rKISWUEHT6qrLpQDRAdNQmiYxIjeaABPAaFlqIkwDTdNyno_R_XHv1rvfHYSo1m7nbTqpWJEM8FywMlHkSBnvQvDQqa3vN9rvFSXqIFElieogUZ0kpsjdMdIDwD8u07qc0_wP4t1uKw</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Yu, Pengfei</creator><creator>Shao, Tingquan</creator><creator>Ma, Zhefan</creator><creator>Gao, Pandeng</creator><creator>Jing, Biru</creator><creator>Liu, Wenfei</creator><creator>Liu, Chongqi</creator><creator>Chen, Yongyang</creator><creator>Liu, Yuanpei</creator><creator>Fang, Zhou</creator><creator>Luan, Lijun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><orcidid>https://orcid.org/0000-0002-8361-7625</orcidid><orcidid>https://orcid.org/0000-0002-2502-8574</orcidid></search><sort><creationdate>20210401</creationdate><title>Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals</title><author>Yu, Pengfei ; Shao, Tingquan ; Ma, Zhefan ; Gao, Pandeng ; Jing, Biru ; Liu, Wenfei ; Liu, Chongqi ; Chen, Yongyang ; Liu, Yuanpei ; Fang, Zhou ; Luan, Lijun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-88b44990497e58a9e7ebda7f398e8fe2ae6cb8b483ca0e28e2166a08cbebbd443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Annealing</topic><topic>Cadmium</topic><topic>cadmium compounds</topic><topic>Carrier density</topic><topic>Conductivity</topic><topic>Crystal surfaces</topic><topic>Crystals</topic><topic>current–voltage characteristics</topic><topic>Detectors</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Energy resolution</topic><topic>Hydrogen</topic><topic>Manganese</topic><topic>materials testing</topic><topic>Mobility</topic><topic>Raman spectroscopy</topic><topic>semiconductor detectors</topic><topic>Sensors</topic><topic>Surface treatment</topic><topic>Tellurides</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Pengfei</creatorcontrib><creatorcontrib>Shao, Tingquan</creatorcontrib><creatorcontrib>Ma, Zhefan</creatorcontrib><creatorcontrib>Gao, Pandeng</creatorcontrib><creatorcontrib>Jing, Biru</creatorcontrib><creatorcontrib>Liu, Wenfei</creatorcontrib><creatorcontrib>Liu, Chongqi</creatorcontrib><creatorcontrib>Chen, Yongyang</creatorcontrib><creatorcontrib>Liu, Yuanpei</creatorcontrib><creatorcontrib>Fang, Zhou</creatorcontrib><creatorcontrib>Luan, Lijun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, Pengfei</au><au>Shao, Tingquan</au><au>Ma, Zhefan</au><au>Gao, Pandeng</au><au>Jing, Biru</au><au>Liu, Wenfei</au><au>Liu, Chongqi</au><au>Chen, Yongyang</au><au>Liu, Yuanpei</au><au>Fang, Zhou</au><au>Luan, Lijun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>68</volume><issue>4</issue><spage>458</spage><epage>462</epage><pages>458-462</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract><![CDATA[The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from <inline-formula> <tex-math notation="LaTeX">10^{9} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">10^{10} ~\Omega \cdot </tex-math></inline-formula>cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A 1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (<inline-formula> <tex-math notation="LaTeX">\mu \tau </tex-math></inline-formula>) e value had the best detector performance.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2021.3067726</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-8361-7625</orcidid><orcidid>https://orcid.org/0000-0002-2502-8574</orcidid></addata></record> |
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| subjects | Annealing Cadmium cadmium compounds Carrier density Conductivity Crystal surfaces Crystals current–voltage characteristics Detectors Electrical properties Electrical resistivity Energy resolution Hydrogen Manganese materials testing Mobility Raman spectroscopy semiconductor detectors Sensors Surface treatment Tellurides Temperature measurement |
| title | Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T17%3A25%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20Hydrogen%20Treatment%20on%20Electrical%20Properties%20of%20Detector-Grade%20CdMnTe:In%20Crystals&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Yu,%20Pengfei&rft.date=2021-04-01&rft.volume=68&rft.issue=4&rft.spage=458&rft.epage=462&rft.pages=458-462&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2021.3067726&rft_dat=%3Cproquest_RIE%3E2515743826%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2515743826&rft_id=info:pmid/&rft_ieee_id=9382341&rfr_iscdi=true |