A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transistors submitted to semi- ON-state stress. The model...

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Veröffentlicht in:	IEEE electron device letters 2021-05, Vol.42 (5), p.673-676
Hauptverfasser:	Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Sicre, Sebastien, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Format:	Artikel
Sprache:	eng
Schlagworte:	analytical model Electron traps Gallium nitrides HEMTs High electron mobility transistors Hot electrons Kinetics Mathematical model MODFETs p-GaN HEMTs semi-ON-stress Stress Transient analysis Trapping Wide band gap semiconductors
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