Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs
In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving transconductance (Gm) and cutoff frequency ( {f}_{\text {T}} ) linearity. It is found that the Gm profile for Fin-...
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| Veröffentlicht in: | IEEE transactions on electron devices 2021-04, Vol.68 (4), p.1563-1569 |
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| creator | Wang, Pengfei Ma, Xiaohua Mi, Minhan Zhang, Meng Zhu, Jiejie Zhou, Yuwei Wu, Sheng Liu, Jielong Yang, Ling Hou, Bin Hao, Yue |
| description | In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving transconductance (Gm) and cutoff frequency ( {f}_{\text {T}} ) linearity. It is found that the Gm profile for Fin-like HEMTs can be optimized by choosing appropriate device parameters, including the etching depth ( {H}_{\text {R}} ) and width ( {W}_{\text {R}} ) of recess region, as well as the duty ratio ( \alpha ) of the planar elements in a periodic unit along the gate width. In general, not only does {W}_{\text {R}} affect the gate voltage swing (GVS) but also {H}_{\text {R}} and \alpha have an important role in Gm profile flatness. In addition, the fabricated Fin-like HEMTs shows a GVS of the transconductance plateau larger than 5.6 V and a constant {f}_{\text {T}}/{f}_{\text {max}} of 45 GHz/65 GHz over a wide gate voltage range. Furthermore, the proposed architecture also features an exceptional linearity performance at 8 GHz with an output third-order intercept point (OIP3) of 38.5 dBm, whereas that of the planar HEMT is 31 dBm. The device demonstrated in this article has great potential to be a new paradigm for future wireless communication systems where high linearity is essential. |
| doi_str_mv | 10.1109/TED.2021.3062561 |
| format | Article |
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It is found that the Gm profile for Fin-like HEMTs can be optimized by choosing appropriate device parameters, including the etching depth (<inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula>) and width (<inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula>) of recess region, as well as the duty ratio (<inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula>) of the planar elements in a periodic unit along the gate width. In general, not only does <inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula> affect the gate voltage swing (GVS) but also <inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula> have an important role in Gm profile flatness. In addition, the fabricated Fin-like HEMTs shows a GVS of the transconductance plateau larger than 5.6 V and a constant <inline-formula> <tex-math notation="LaTeX">{f}_{\text {T}}/{f}_{\text {max}} </tex-math></inline-formula> of 45 GHz/65 GHz over a wide gate voltage range. Furthermore, the proposed architecture also features an exceptional linearity performance at 8 GHz with an output third-order intercept point (OIP3) of 38.5 dBm, whereas that of the planar HEMT is 31 dBm. The device demonstrated in this article has great potential to be a new paradigm for future wireless communication systems where high linearity is essential.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2021.3062561</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitrides ; Configurations ; Electric potential ; Etching ; Fin-like high-electron-mobility transistors (HEMTs) ; GaN HEMTs ; gate voltage swing (GVS) ; HEMTs ; High electron mobility transistors ; Linearity ; Logic gates ; MODFETs ; Parameters ; Third order intercept point ; Transconductance ; transconductance compensation ; Voltage ; Wide band gap semiconductors ; Wireless communication systems ; Wireless communications</subject><ispartof>IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1563-1569</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-8ea85e39adddf4863ef4d9a2a0a18f2921cdaf10ebafb1ddcc22a2901fd7c6433</citedby><cites>FETCH-LOGICAL-c291t-8ea85e39adddf4863ef4d9a2a0a18f2921cdaf10ebafb1ddcc22a2901fd7c6433</cites><orcidid>0000-0001-8827-1398 ; 0000-0001-7284-8180 ; 0000-0002-1331-6253 ; 0000-0002-9739-1233 ; 0000-0002-6770-0090 ; 0000-0002-5436-2221 ; 0000-0002-4638-5239 ; 0000-0002-5368-3699</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9377626$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9377626$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Pengfei</creatorcontrib><creatorcontrib>Ma, Xiaohua</creatorcontrib><creatorcontrib>Mi, Minhan</creatorcontrib><creatorcontrib>Zhang, Meng</creatorcontrib><creatorcontrib>Zhu, Jiejie</creatorcontrib><creatorcontrib>Zhou, Yuwei</creatorcontrib><creatorcontrib>Wu, Sheng</creatorcontrib><creatorcontrib>Liu, Jielong</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Hou, Bin</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><title>Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving transconductance (Gm) and cutoff frequency (<inline-formula> <tex-math notation="LaTeX">{f}_{\text {T}} </tex-math></inline-formula>) linearity. It is found that the Gm profile for Fin-like HEMTs can be optimized by choosing appropriate device parameters, including the etching depth (<inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula>) and width (<inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula>) of recess region, as well as the duty ratio (<inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula>) of the planar elements in a periodic unit along the gate width. In general, not only does <inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula> affect the gate voltage swing (GVS) but also <inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula> have an important role in Gm profile flatness. In addition, the fabricated Fin-like HEMTs shows a GVS of the transconductance plateau larger than 5.6 V and a constant <inline-formula> <tex-math notation="LaTeX">{f}_{\text {T}}/{f}_{\text {max}} </tex-math></inline-formula> of 45 GHz/65 GHz over a wide gate voltage range. Furthermore, the proposed architecture also features an exceptional linearity performance at 8 GHz with an output third-order intercept point (OIP3) of 38.5 dBm, whereas that of the planar HEMT is 31 dBm. The device demonstrated in this article has great potential to be a new paradigm for future wireless communication systems where high linearity is essential.]]></description><subject>Aluminum gallium nitrides</subject><subject>Configurations</subject><subject>Electric potential</subject><subject>Etching</subject><subject>Fin-like high-electron-mobility transistors (HEMTs)</subject><subject>GaN HEMTs</subject><subject>gate voltage swing (GVS)</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Linearity</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>Parameters</subject><subject>Third order intercept point</subject><subject>Transconductance</subject><subject>transconductance compensation</subject><subject>Voltage</subject><subject>Wide band gap semiconductors</subject><subject>Wireless communication systems</subject><subject>Wireless communications</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpeA57T7kWyyx1L7BfEDqedlmp3VrW1Sd5ND_71bKh6G4YXnnYGHkHtGR4xRNV7PnkaccjYSVPJcsgsyYHlepEpm8pIMKGVlqkQprslNCNsYZZbxAXlfNXbXY1Nj0tpk7pq0ct-YTNvGus_eQ-faJnkDD3vs0Ickpu4Lk8o1CN51x1NrslvAyzhOspw9r8MtubKwC3j3t4fkYz5bT5dp9bpYTSdVWnPFurREKHMUCowxNiulQJsZBRwosNJyxVltwDKKG7AbZkxdcw5cUWZNUctMiCF5PN89-Panx9Dpbdv7Jr7UPKdRgcgEjRQ9U7VvQ_Bo9cG7PfijZlSfzOloTp_M6T9zsfJwrjhE_MeVKArJpfgFgkdpOg</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Wang, Pengfei</creator><creator>Ma, Xiaohua</creator><creator>Mi, Minhan</creator><creator>Zhang, Meng</creator><creator>Zhu, Jiejie</creator><creator>Zhou, Yuwei</creator><creator>Wu, Sheng</creator><creator>Liu, Jielong</creator><creator>Yang, Ling</creator><creator>Hou, Bin</creator><creator>Hao, Yue</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8827-1398</orcidid><orcidid>https://orcid.org/0000-0001-7284-8180</orcidid><orcidid>https://orcid.org/0000-0002-1331-6253</orcidid><orcidid>https://orcid.org/0000-0002-9739-1233</orcidid><orcidid>https://orcid.org/0000-0002-6770-0090</orcidid><orcidid>https://orcid.org/0000-0002-5436-2221</orcidid><orcidid>https://orcid.org/0000-0002-4638-5239</orcidid><orcidid>https://orcid.org/0000-0002-5368-3699</orcidid></search><sort><creationdate>20210401</creationdate><title>Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs</title><author>Wang, Pengfei ; Ma, Xiaohua ; Mi, Minhan ; Zhang, Meng ; Zhu, Jiejie ; Zhou, Yuwei ; Wu, Sheng ; Liu, Jielong ; Yang, Ling ; Hou, Bin ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-8ea85e39adddf4863ef4d9a2a0a18f2921cdaf10ebafb1ddcc22a2901fd7c6433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum gallium nitrides</topic><topic>Configurations</topic><topic>Electric potential</topic><topic>Etching</topic><topic>Fin-like high-electron-mobility transistors (HEMTs)</topic><topic>GaN HEMTs</topic><topic>gate voltage swing (GVS)</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Linearity</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>Parameters</topic><topic>Third order intercept point</topic><topic>Transconductance</topic><topic>transconductance compensation</topic><topic>Voltage</topic><topic>Wide band gap semiconductors</topic><topic>Wireless communication systems</topic><topic>Wireless communications</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Pengfei</creatorcontrib><creatorcontrib>Ma, Xiaohua</creatorcontrib><creatorcontrib>Mi, Minhan</creatorcontrib><creatorcontrib>Zhang, Meng</creatorcontrib><creatorcontrib>Zhu, Jiejie</creatorcontrib><creatorcontrib>Zhou, Yuwei</creatorcontrib><creatorcontrib>Wu, Sheng</creatorcontrib><creatorcontrib>Liu, Jielong</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Hou, Bin</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Pengfei</au><au>Ma, Xiaohua</au><au>Mi, Minhan</au><au>Zhang, Meng</au><au>Zhu, Jiejie</au><au>Zhou, Yuwei</au><au>Wu, Sheng</au><au>Liu, Jielong</au><au>Yang, Ling</au><au>Hou, Bin</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>68</volume><issue>4</issue><spage>1563</spage><epage>1569</epage><pages>1563-1569</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under the gate on improving transconductance (Gm) and cutoff frequency (<inline-formula> <tex-math notation="LaTeX">{f}_{\text {T}} </tex-math></inline-formula>) linearity. It is found that the Gm profile for Fin-like HEMTs can be optimized by choosing appropriate device parameters, including the etching depth (<inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula>) and width (<inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula>) of recess region, as well as the duty ratio (<inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula>) of the planar elements in a periodic unit along the gate width. In general, not only does <inline-formula> <tex-math notation="LaTeX">{W}_{\text {R}} </tex-math></inline-formula> affect the gate voltage swing (GVS) but also <inline-formula> <tex-math notation="LaTeX">{H}_{\text {R}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\alpha </tex-math></inline-formula> have an important role in Gm profile flatness. In addition, the fabricated Fin-like HEMTs shows a GVS of the transconductance plateau larger than 5.6 V and a constant <inline-formula> <tex-math notation="LaTeX">{f}_{\text {T}}/{f}_{\text {max}} </tex-math></inline-formula> of 45 GHz/65 GHz over a wide gate voltage range. Furthermore, the proposed architecture also features an exceptional linearity performance at 8 GHz with an output third-order intercept point (OIP3) of 38.5 dBm, whereas that of the planar HEMT is 31 dBm. The device demonstrated in this article has great potential to be a new paradigm for future wireless communication systems where high linearity is essential.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2021.3062561</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8827-1398</orcidid><orcidid>https://orcid.org/0000-0001-7284-8180</orcidid><orcidid>https://orcid.org/0000-0002-1331-6253</orcidid><orcidid>https://orcid.org/0000-0002-9739-1233</orcidid><orcidid>https://orcid.org/0000-0002-6770-0090</orcidid><orcidid>https://orcid.org/0000-0002-5436-2221</orcidid><orcidid>https://orcid.org/0000-0002-4638-5239</orcidid><orcidid>https://orcid.org/0000-0002-5368-3699</orcidid></addata></record> |
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| subjects | Aluminum gallium nitrides Configurations Electric potential Etching Fin-like high-electron-mobility transistors (HEMTs) GaN HEMTs gate voltage swing (GVS) HEMTs High electron mobility transistors Linearity Logic gates MODFETs Parameters Third order intercept point Transconductance transconductance compensation Voltage Wide band gap semiconductors Wireless communication systems Wireless communications |
| title | Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs |
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