A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

This letter presents a {W} -band low-power and high-gain differential low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA operates at a 0.6-V supply voltage ( {V} _{\mathbf {DD}} ) to achieve low power consumption and respond to the low-voltage regime anticipated in future...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2021-05, Vol.31 (5), p.481-484
Hauptverfasser:	Liang, Chia-Jen, Chiang, Ching-Wen, Zhou, Jia, Huang, Rulin, Wen, Kuei-Ann, Frank Chang, Mau-Chung, Kuan, Yen-Cheng
Format:	Artikel
Sprache:	eng
Schlagworte:	28-nm bulk CMOS <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">W -band Amplification Amplifiers CMOS CMOS technology Coils differential low noise amplifier (LNA) Electric potential Gain High gain low <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">VDD Low noise low power low supply voltage Microwave amplifiers millimeter-wave (mmWave) neutralized common-source Noise measurement Noise reduction Power consumption Power gain Resistors Semiconductor device measurement Stability analysis Topology Transformers Voltage Wireless communication
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