Gaussian Pulse Characterization of RF Power Amplifiers
This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidt...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2021-04, Vol.31 (4), p.417-420 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Cappello, Tommaso Popovic, Zoya Morris, Kevin Cappello, Angelo |
| description | This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2.3 dB and 6° for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level. |
| doi_str_mv | 10.1109/LMWC.2021.3054049 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9350310</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9350310</ieee_id><sourcerecordid>2510428613</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-7b8a5d6b76b651c49777a31292a85349ed40da637e251c6d2c1a1f0b776e3c783</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFZ_gHgJeE6d2dmP7LEErULFIorHZZNsMKVt6m6C6K83ocXTvDDPOwMPY9cIM0Qwd8vnj3zGgeOMQAoQ5oRNUMosRa3E6ZgJUyQw5-wixjUAikzghKmF62Ns3C5Z9Zvok_zTBVd2PjS_rmvaXdLWyetDsmq_fUjm2_2mqRsf4iU7q93AXx3nlL0_3L_lj-nyZfGUz5dpSaS6VBeZk5UqtCqUxFIYrbUj5Ia7TJIwvhJQOUXa82GtKl6iwxoKrZWnUmc0ZbeHu_vQfvU-dnbd9mE3vLRDAwTPFNJA4YEqQxtj8LXdh2brwo9FsKMeO-qxox571DN0bg6dxnv_zxuSQAj0B0PpXtw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2510428613</pqid></control><display><type>article</type><title>Gaussian Pulse Characterization of RF Power Amplifiers</title><source>IEEE Electronic Library (IEL)</source><creator>Cappello, Tommaso ; Popovic, Zoya ; Morris, Kevin ; Cappello, Angelo</creator><creatorcontrib>Cappello, Tommaso ; Popovic, Zoya ; Morris, Kevin ; Cappello, Angelo</creatorcontrib><description><![CDATA[This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2.3 dB and 6° for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth and peak power level.]]></description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2021.3054049</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Gain ; Gallium nitride ; Integrated circuit modeling ; memory effects ; nonlinear characterization ; power amplifier (PA) ; Power amplifiers ; Radio frequency ; RF measurements ; Shape ; trapping effects ; Wireless communication</subject><ispartof>IEEE microwave and wireless components letters, 2021-04, Vol.31 (4), p.417-420</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-7b8a5d6b76b651c49777a31292a85349ed40da637e251c6d2c1a1f0b776e3c783</citedby><cites>FETCH-LOGICAL-c336t-7b8a5d6b76b651c49777a31292a85349ed40da637e251c6d2c1a1f0b776e3c783</cites><orcidid>0000-0001-5131-2133 ; 0000-0003-2408-5830 ; 0000-0001-7651-2254</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9350310$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9350310$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Cappello, Tommaso</creatorcontrib><creatorcontrib>Popovic, Zoya</creatorcontrib><creatorcontrib>Morris, Kevin</creatorcontrib><creatorcontrib>Cappello, Angelo</creatorcontrib><title>Gaussian Pulse Characterization of RF Power Amplifiers</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description><![CDATA[This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2.3 dB and 6° for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth and peak power level.]]></description><subject>Bandwidth</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Integrated circuit modeling</subject><subject>memory effects</subject><subject>nonlinear characterization</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Radio frequency</subject><subject>RF measurements</subject><subject>Shape</subject><subject>trapping effects</subject><subject>Wireless communication</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFZ_gHgJeE6d2dmP7LEErULFIorHZZNsMKVt6m6C6K83ocXTvDDPOwMPY9cIM0Qwd8vnj3zGgeOMQAoQ5oRNUMosRa3E6ZgJUyQw5-wixjUAikzghKmF62Ns3C5Z9Zvok_zTBVd2PjS_rmvaXdLWyetDsmq_fUjm2_2mqRsf4iU7q93AXx3nlL0_3L_lj-nyZfGUz5dpSaS6VBeZk5UqtCqUxFIYrbUj5Ia7TJIwvhJQOUXa82GtKl6iwxoKrZWnUmc0ZbeHu_vQfvU-dnbd9mE3vLRDAwTPFNJA4YEqQxtj8LXdh2brwo9FsKMeO-qxox571DN0bg6dxnv_zxuSQAj0B0PpXtw</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Cappello, Tommaso</creator><creator>Popovic, Zoya</creator><creator>Morris, Kevin</creator><creator>Cappello, Angelo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5131-2133</orcidid><orcidid>https://orcid.org/0000-0003-2408-5830</orcidid><orcidid>https://orcid.org/0000-0001-7651-2254</orcidid></search><sort><creationdate>20210401</creationdate><title>Gaussian Pulse Characterization of RF Power Amplifiers</title><author>Cappello, Tommaso ; Popovic, Zoya ; Morris, Kevin ; Cappello, Angelo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-7b8a5d6b76b651c49777a31292a85349ed40da637e251c6d2c1a1f0b776e3c783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bandwidth</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>Integrated circuit modeling</topic><topic>memory effects</topic><topic>nonlinear characterization</topic><topic>power amplifier (PA)</topic><topic>Power amplifiers</topic><topic>Radio frequency</topic><topic>RF measurements</topic><topic>Shape</topic><topic>trapping effects</topic><topic>Wireless communication</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cappello, Tommaso</creatorcontrib><creatorcontrib>Popovic, Zoya</creatorcontrib><creatorcontrib>Morris, Kevin</creatorcontrib><creatorcontrib>Cappello, Angelo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cappello, Tommaso</au><au>Popovic, Zoya</au><au>Morris, Kevin</au><au>Cappello, Angelo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gaussian Pulse Characterization of RF Power Amplifiers</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>31</volume><issue>4</issue><spage>417</spage><epage>420</epage><pages>417-420</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract><![CDATA[This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2.3 dB and 6° for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the <inline-formula> <tex-math notation="LaTeX">I/Q </tex-math></inline-formula> signal bandwidth and peak power level.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2021.3054049</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5131-2133</orcidid><orcidid>https://orcid.org/0000-0003-2408-5830</orcidid><orcidid>https://orcid.org/0000-0001-7651-2254</orcidid><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2021-04, Vol.31 (4), p.417-420 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
| recordid | cdi_ieee_primary_9350310 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Gain Gallium nitride Integrated circuit modeling memory effects nonlinear characterization power amplifier (PA) Power amplifiers Radio frequency RF measurements Shape trapping effects Wireless communication |
| title | Gaussian Pulse Characterization of RF Power Amplifiers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T04%3A26%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gaussian%20Pulse%20Characterization%20of%20RF%20Power%20Amplifiers&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Cappello,%20Tommaso&rft.date=2021-04-01&rft.volume=31&rft.issue=4&rft.spage=417&rft.epage=420&rft.pages=417-420&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2021.3054049&rft_dat=%3Cproquest_RIE%3E2510428613%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2510428613&rft_id=info:pmid/&rft_ieee_id=9350310&rfr_iscdi=true |