Accurate prediction of deep submicron CMOS device characteristics using inverse modeling techniques

This work presents a very simple and predictive technology CAD (TCAD) calibration methodology, which employs inverse modeling to support and enhance process technology development. In this paper we describe the way in which TCAD tools are calibrated using physical, current-voltage (I-V) and capacita...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pandey, S.K., Qian Wensheng, Sarkar, M., Benistant, F., Boyland, F., Redford, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Calibration Capacitance Capacitance-voltage characteristics CMOS technology Data mining Doping profiles Implants Inverse problems Medical simulation US Department of Energy
Online-Zugang:	Volltext bestellen
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