Channel Properties of Ga₂O₃-on-SiC MOSFETs

We report the characterization of the channel mobility properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) on the heterogeneous \beta -Ga 2 O 3 -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The mobility of GaOSiC MOSFETs is significantly improved as the pos...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-03, Vol.68 (3), p.1185-1189
Hauptverfasser:	Wang, Yibo, Xu, Wenhui, Han, Genquan, You, Tiangui, Mu, Fengwen, Hu, Haodong, Liu, Yan, Zhang, Xinchuang, Huang, Hao, Suga, Tadatomo, Ou, Xin, Ma, Xiaohua, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Ambient temperature Annealing Cutting Electronic devices Field effect transistors Gallium oxides GaOSiC Ga₂O Ga₂O₃-on-SiC heterogeneous High temperature Ion implantation Logic gates Metal oxide semiconductors metal-oxide-semiconductor field-effect transistor (MOSFET) mobility MOSFET MOSFETs Resistance Semiconductor devices Silicon carbide Substrates Thermal conductivity Transistors Transport properties
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