Yb/InSe/SiO₂/Au Straddling-Type Tunneling Devices Designed As Photosensors, MOS Capacitors, and Gigahertz Bandstop Filters
In this work, amorphous InSe thin films coated with 30-160-nm-thick SiO 2 are used as an active material to fabricate multifunctional devices. The {n} -InSe/ {p} -SiO 2 layers that are deposited onto ytterbium substrates are optically and electrically characterized. It was observed that the coating...
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Veröffentlicht in: | IEEE transactions on electron devices 2021-03, Vol.68 (3), p.1093-1100 |
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