Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM

A new dynamic random access memory (DRAM) memory cell transistor is fabricated, and its soft-error immunity and rowhammer tolerance are studied. The vertical channel is formed by selective epitaxial growth of silicon pillar, and the surround gate forms a fully depleted (FD) channel, which can suppre...

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