Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450/spl deg/C on commercial ALD reactor, employs TBTDET and NH/sub 3/ as the tantalum and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Eisenbraun, E., van der Straten, O., Yu Zhu, Dovidenko, K., Kaloyeros, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic layer deposition Chemical vapor deposition Copper Dielectric substrates Inductors Nitrogen Robustness Scanning electron microscopy Semiconductor films Temperature
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