Defect and electromigration characterization of a two level copper interconnect
The effect of annealing conditions on defects and post CMP grain size in electroplated Cu lines is discussed. We have studied the effect of these parameters on interconnect reliability by measuring the electromigration of 'via-fed' structures. A failure criterion of 2% change in initial re...
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| creator | Parikh, S. Educato, J. Wang, A. Zheng, B. Wijekoon, K. Chen, J. Rana, V. Cheung, R. Dixit, G. |
| description | The effect of annealing conditions on defects and post CMP grain size in electroplated Cu lines is discussed. We have studied the effect of these parameters on interconnect reliability by measuring the electromigration of 'via-fed' structures. A failure criterion of 2% change in initial resistance was used for EM rather than the traditional 20% used for aluminum interconnect. The electromigration behavior of furnace annealed films is compared to rapid thermal annealed films and the activation energy is found to be in the range of 0.9 to 1.0 eV. |
| doi_str_mv | 10.1109/IITC.2001.930054 |
| format | Conference Proceeding |
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We have studied the effect of these parameters on interconnect reliability by measuring the electromigration of 'via-fed' structures. A failure criterion of 2% change in initial resistance was used for EM rather than the traditional 20% used for aluminum interconnect. The electromigration behavior of furnace annealed films is compared to rapid thermal annealed films and the activation energy is found to be in the range of 0.9 to 1.0 eV.</description><identifier>ISBN: 9780780366787</identifier><identifier>ISBN: 0780366786</identifier><identifier>DOI: 10.1109/IITC.2001.930054</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Artificial intelligence ; Copper ; Corrosion ; Dielectrics ; Electromigration ; Etching ; Furnaces ; Passivation ; Silicon compounds</subject><ispartof>Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. 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The electromigration behavior of furnace annealed films is compared to rapid thermal annealed films and the activation energy is found to be in the range of 0.9 to 1.0 eV.</description><subject>Annealing</subject><subject>Artificial intelligence</subject><subject>Copper</subject><subject>Corrosion</subject><subject>Dielectrics</subject><subject>Electromigration</subject><subject>Etching</subject><subject>Furnaces</subject><subject>Passivation</subject><subject>Silicon compounds</subject><isbn>9780780366787</isbn><isbn>0780366786</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT01LxDAUDIigrL2Lp_yB1nynPUr9KizsZT0vr8mLRrpNSYuiv95CHQZmGN4bGEJuOas4Z8191x3bSjDGq0YyptUFKRpbs5XSGFvbK1LM8ydbobSShl-TwyMGdAuF0VMcVpfTOb5nWGIaqfuADG7BHH-3IAUKdPlOdMAvHKhL04SZxnE9cWkc1_cbchlgmLH41x15e346tq_l_vDStQ_7MnKmlpILkEFIrBX2PQoLrtHKYROC0FzXPfNcMy-td2C1AEDDvfA69IJrh8bIHbnbeiMinqYcz5B_Tttq-QfFSU64</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Parikh, S.</creator><creator>Educato, J.</creator><creator>Wang, A.</creator><creator>Zheng, B.</creator><creator>Wijekoon, K.</creator><creator>Chen, J.</creator><creator>Rana, V.</creator><creator>Cheung, R.</creator><creator>Dixit, G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>Defect and electromigration characterization of a two level copper interconnect</title><author>Parikh, S. ; Educato, J. ; Wang, A. ; Zheng, B. ; Wijekoon, K. ; Chen, J. ; Rana, V. ; Cheung, R. ; Dixit, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-12a3f23e84ebbe27ac954ce9ff25158b0d150d37dca752aae61d2d5fb215ce663</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Annealing</topic><topic>Artificial intelligence</topic><topic>Copper</topic><topic>Corrosion</topic><topic>Dielectrics</topic><topic>Electromigration</topic><topic>Etching</topic><topic>Furnaces</topic><topic>Passivation</topic><topic>Silicon compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Parikh, S.</creatorcontrib><creatorcontrib>Educato, J.</creatorcontrib><creatorcontrib>Wang, A.</creatorcontrib><creatorcontrib>Zheng, B.</creatorcontrib><creatorcontrib>Wijekoon, K.</creatorcontrib><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Rana, V.</creatorcontrib><creatorcontrib>Cheung, R.</creatorcontrib><creatorcontrib>Dixit, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Parikh, S.</au><au>Educato, J.</au><au>Wang, A.</au><au>Zheng, B.</au><au>Wijekoon, K.</au><au>Chen, J.</au><au>Rana, V.</au><au>Cheung, R.</au><au>Dixit, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Defect and electromigration characterization of a two level copper interconnect</atitle><btitle>Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. 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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Artificial intelligence Copper Corrosion Dielectrics Electromigration Etching Furnaces Passivation Silicon compounds |
| title | Defect and electromigration characterization of a two level copper interconnect |
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