Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB
In this paper, we present the effect of plasma descum by O/sub 2//C/sub 2/F/sub 6/ gas mixture on the via formation of photosensitive BCB layer and compare it with that of RF cleaning. Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to d...
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| creator | Chul-Won Ju Seong-Su Park Seong-Jin Kim Kyu-Ha Pack Hee-Tae Lee Min-Kyu Song |
| description | In this paper, we present the effect of plasma descum by O/sub 2//C/sub 2/F/sub 6/ gas mixture on the via formation of photosensitive BCB layer and compare it with that of RF cleaning. Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to descum the via. Residues at via bottom after the descum process were investigated by AES (auger electron microscope) and SEM (scanning electron microscope). It is shown in this work that O/sub 2//C/sub 2/F/sub 6/ plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O/sub 2//C/sub 2/F/sub 6/ gas mixture and RF cleaning can efficiently remove the via residues. |
| doi_str_mv | 10.1109/ECTC.2001.927983 |
| format | Conference Proceeding |
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Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to descum the via. Residues at via bottom after the descum process were investigated by AES (auger electron microscope) and SEM (scanning electron microscope). It is shown in this work that O/sub 2//C/sub 2/F/sub 6/ plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O/sub 2//C/sub 2/F/sub 6/ gas mixture and RF cleaning can efficiently remove the via residues.</description><identifier>ISSN: 0569-5503</identifier><identifier>ISBN: 0780370384</identifier><identifier>ISBN: 9780780370388</identifier><identifier>EISSN: 2377-5726</identifier><identifier>DOI: 10.1109/ECTC.2001.927983</identifier><language>eng</language><publisher>IEEE</publisher><subject>Argon ; Cleaning ; Electronic components ; Kinetic energy ; Plasma applications ; Plasma chemistry ; Radio frequency ; Sputter etching ; Testing ; Vehicles</subject><ispartof>2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. 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It is shown in this work that O/sub 2//C/sub 2/F/sub 6/ plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O/sub 2//C/sub 2/F/sub 6/ gas mixture and RF cleaning can efficiently remove the via residues.</description><subject>Argon</subject><subject>Cleaning</subject><subject>Electronic components</subject><subject>Kinetic energy</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Radio frequency</subject><subject>Sputter etching</subject><subject>Testing</subject><subject>Vehicles</subject><issn>0569-5503</issn><issn>2377-5726</issn><isbn>0780370384</isbn><isbn>9780780370388</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9T71OwzAYtPiRCKU7YvpeILFjx3Gy1iRiqZCq7pUJDjVK4iifU8TGoxOgM7fcne5uOELuU5akKStppfc64YylSclVWYgLEnGhVCwVzy_JLVMFE4qJIrsiEZN5GUvJxA1ZI76zBZnMhMwi8lW1rW0Cgm_hmeL8ApxSfRb1L-cUxs5gb-DVYjP38OHCEXY1NJ01gxvewA9wcgZaP_UmuMW5AbZ6Gz_CsscwmWBhxp_mePTBox3QBXeysNGbO3Ldmg7t-swr8lBXe_0UO2vtYZxcb6bPw99H8W_4DYJ3UDQ</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Chul-Won Ju</creator><creator>Seong-Su Park</creator><creator>Seong-Jin Kim</creator><creator>Kyu-Ha Pack</creator><creator>Hee-Tae Lee</creator><creator>Min-Kyu Song</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB</title><author>Chul-Won Ju ; Seong-Su Park ; Seong-Jin Kim ; Kyu-Ha Pack ; Hee-Tae Lee ; Min-Kyu Song</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9279833</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Argon</topic><topic>Cleaning</topic><topic>Electronic components</topic><topic>Kinetic energy</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Radio frequency</topic><topic>Sputter etching</topic><topic>Testing</topic><topic>Vehicles</topic><toplevel>online_resources</toplevel><creatorcontrib>Chul-Won Ju</creatorcontrib><creatorcontrib>Seong-Su Park</creatorcontrib><creatorcontrib>Seong-Jin Kim</creatorcontrib><creatorcontrib>Kyu-Ha Pack</creatorcontrib><creatorcontrib>Hee-Tae Lee</creatorcontrib><creatorcontrib>Min-Kyu Song</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chul-Won Ju</au><au>Seong-Su Park</au><au>Seong-Jin Kim</au><au>Kyu-Ha Pack</au><au>Hee-Tae Lee</au><au>Min-Kyu Song</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB</atitle><btitle>2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)</btitle><stitle>ECTC</stitle><date>2001</date><risdate>2001</risdate><spage>1216</spage><epage>1218</epage><pages>1216-1218</pages><issn>0569-5503</issn><eissn>2377-5726</eissn><isbn>0780370384</isbn><isbn>9780780370388</isbn><abstract>In this paper, we present the effect of plasma descum by O/sub 2//C/sub 2/F/sub 6/ gas mixture on the via formation of photosensitive BCB layer and compare it with that of RF cleaning. Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to descum the via. Residues at via bottom after the descum process were investigated by AES (auger electron microscope) and SEM (scanning electron microscope). It is shown in this work that O/sub 2//C/sub 2/F/sub 6/ plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O/sub 2//C/sub 2/F/sub 6/ gas mixture and RF cleaning can efficiently remove the via residues.</abstract><pub>IEEE</pub><doi>10.1109/ECTC.2001.927983</doi></addata></record> |
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| identifier | ISSN: 0569-5503 |
| ispartof | 2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220), 2001, p.1216-1218 |
| issn | 0569-5503 2377-5726 |
| language | eng |
| recordid | cdi_ieee_primary_927983 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Argon Cleaning Electronic components Kinetic energy Plasma applications Plasma chemistry Radio frequency Sputter etching Testing Vehicles |
| title | Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB |
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